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IAUCN04S6N017TATMA1

IAUCN04S6N017TATMA1 Infineon Technologies

Infineon_IAUCN04S6N017T_DataSheet_v01_01_EN-3372547.pdf Hersteller: Infineon Technologies
MOSFET MOSFET_(20V 40V)
auf Bestellung 1975 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+3.15 EUR
10+ 2.64 EUR
100+ 2.09 EUR
250+ 1.94 EUR
500+ 1.75 EUR
1000+ 1.51 EUR
2000+ 1.43 EUR
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Technische Details IAUCN04S6N017TATMA1 Infineon Technologies

Description: MOSFET_(20V 40V), Packaging: Tape & Reel (TR), Package / Case: 10-LSOP (0.216", 5.48mm Width) Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 120A (Tj), Rds On (Max) @ Id, Vgs: 1.73mOhm @ 60A, 10V, Power Dissipation (Max): 103W (Tc), Vgs(th) (Max) @ Id: 3V @ 40µA, Supplier Device Package: PG-LHDSO-10-1, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 25 V, Qualification: AEC-Q101.

Weitere Produktangebote IAUCN04S6N017TATMA1 nach Preis ab 1.55 EUR bis 3.15 EUR

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Preis ohne MwSt
IAUCN04S6N017TATMA1 IAUCN04S6N017TATMA1 Hersteller : Infineon Technologies Infineon-IAUCN04S6N017T-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c8929aa4d018a1dcbedb71ed7 Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 10-LSOP (0.216", 5.48mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 120A (Tj)
Rds On (Max) @ Id, Vgs: 1.73mOhm @ 60A, 10V
Power Dissipation (Max): 103W (Tc)
Vgs(th) (Max) @ Id: 3V @ 40µA
Supplier Device Package: PG-LHDSO-10-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+3.15 EUR
10+ 2.83 EUR
25+ 2.67 EUR
100+ 2.28 EUR
250+ 2.14 EUR
500+ 1.87 EUR
1000+ 1.55 EUR
Mindestbestellmenge: 6
IAUCN04S6N017TATMA1 Hersteller : Infineon Technologies infineon-iaucn04s6n017t-datasheet-v01_01-en.pdf Trans MOSFET N-CH 40V 200A 10-Pin LHDSO EP T/R Automotive AEC-Q101
Produkt ist nicht verfügbar
IAUCN04S6N017TATMA1 IAUCN04S6N017TATMA1 Hersteller : Infineon Technologies Infineon-IAUCN04S6N017T-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c8929aa4d018a1dcbedb71ed7 Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 10-LSOP (0.216", 5.48mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 120A (Tj)
Rds On (Max) @ Id, Vgs: 1.73mOhm @ 60A, 10V
Power Dissipation (Max): 103W (Tc)
Vgs(th) (Max) @ Id: 3V @ 40µA
Supplier Device Package: PG-LHDSO-10-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar