IAUCN04S7L023HATMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 75W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 100A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 2518pF @ 20V
Rds On (Max) @ Id, Vgs: 2.34mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.8V @ 25µA
Supplier Device Package: PG-TDSON-8-56
Grade: Automotive
Qualification: AEC-Q101
| Anzahl | Preis |
|---|---|
| 8+ | 2.34 EUR |
| 11+ | 1.71 EUR |
| 25+ | 1.55 EUR |
| 100+ | 1.38 EUR |
| 250+ | 1.3 EUR |
| 500+ | 1.25 EUR |
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Technische Details IAUCN04S7L023HATMA1 Infineon Technologies
Description: MOSFET_(20V 40V), Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 75W (Tc), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 100A (Tj), Input Capacitance (Ciss) (Max) @ Vds: 2518pF @ 20V, Rds On (Max) @ Id, Vgs: 2.34mOhm @ 50A, 10V, Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.8V @ 25µA, Supplier Device Package: PG-TDSON-8-56, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote IAUCN04S7L023HATMA1 nach Preis ab 1.21 EUR bis 2.36 EUR
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IAUCN04S7L023HATMA1 | Hersteller : Infineon Technologies |
MOSFETs 40 V, N-Ch, 2.34 m?, Automotive Power MOSFET, SSO8 HB (5x6), OptiMOS-7 |
auf Bestellung 5696 Stücke: Lieferzeit 10-14 Tag (e) |
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IAUCN04S7L023HATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET_(20V 40V) Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 75W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 100A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 2518pF @ 20V Rds On (Max) @ Id, Vgs: 2.34mOhm @ 50A, 10V Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.8V @ 25µA Supplier Device Package: PG-TDSON-8-56 Grade: Automotive Qualification: AEC-Q101 |
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