IAUCN04S7L025AHATMA1 Infineon Technologies

Description: MOSFET_(20V 40V), Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 75W (Tc), 40W (Tc), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 100A (Tj), 65A (Tj), Input Capacitance (Ciss) (Max) @ Vds: 2518pF @ 20V, 915pF @ 20V, Rds On (Max) @ Id, Vgs: 2.56mOhm @ 50A, 10V, 5.04mOhm @ 30A, 10V, Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V, 14nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.8V @ 25µA, 1.8V @ 10µA, Supplier Device Package: PG-TDSON-8-57, Grade: Automotive, Qualification: AEC-Q101.