IAUCN04S7L037HATMA1 Infineon Technologies
Hersteller: Infineon Technologies
MOSFETs 40 V, N-Ch, 3.78 m?, Automotive Power MOSFET, SSO8 HB (5x6), OptiMOS-7
| Anzahl | Preis |
|---|---|
| 2+ | 1.78 EUR |
| 10+ | 1.17 EUR |
| 100+ | 0.97 EUR |
| 500+ | 0.93 EUR |
| 1000+ | 0.89 EUR |
| 2500+ | 0.87 EUR |
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Technische Details IAUCN04S7L037HATMA1 Infineon Technologies
Description: MOSFET_(20V 40V), Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 50W (Tc), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 84A (Tj), Input Capacitance (Ciss) (Max) @ Vds: 1340pF @ 20V, Rds On (Max) @ Id, Vgs: 3.78mOhm @ 45A, 10V, Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.8V @ 15µA, Supplier Device Package: PG-TDSON-8-56, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote IAUCN04S7L037HATMA1 nach Preis ab 0.96 EUR bis 1.85 EUR
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IAUCN04S7L037HATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET_(20V 40V) Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 50W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 84A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 1340pF @ 20V Rds On (Max) @ Id, Vgs: 3.78mOhm @ 45A, 10V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.8V @ 15µA Supplier Device Package: PG-TDSON-8-56 Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 780 Stücke: Lieferzeit 10-14 Tag (e) |
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IAUCN04S7L037HATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET_(20V 40V) Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 50W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 84A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 1340pF @ 20V Rds On (Max) @ Id, Vgs: 3.78mOhm @ 45A, 10V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.8V @ 15µA Supplier Device Package: PG-TDSON-8-56 Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |