IAUCN04S7N004ATMA1 Infineon Technologies

Description: MOSFET_(20V 40V), Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 175A, Rds On (Max) @ Id, Vgs: 0.44mOhm @ 88A, 10V, Power Dissipation (Max): 219W (Tc), Vgs(th) (Max) @ Id: 3V @ 130µA, Supplier Device Package: PG-TDSON-8-53, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11310 pF @ 20 V, Qualification: AEC-Q101.