IAUCN04S7N006TATMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: IAUCN04S7N006TATMA1
Packaging: Tape & Reel (TR)
Package / Case: 10-LSOP (0.209", 5.30mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Power Dissipation (Max): 205W (Tc)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 146 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10040 pF @ 20 V
Qualification: AEC-Q101
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Technische Details IAUCN04S7N006TATMA1 Infineon Technologies
Description: IAUCN04S7N006TATMA1, Packaging: Tape & Reel (TR), Package / Case: 10-LSOP (0.209", 5.30mm Width) Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Power Dissipation (Max): 205W (Tc), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 146 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10040 pF @ 20 V, Qualification: AEC-Q101.
Weitere Produktangebote IAUCN04S7N006TATMA1 nach Preis ab 2.15 EUR bis 7 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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IAUCN04S7N006TATMA1 | Infineon Technologies |
MOSFETs OptiMOS 7 Power-Transistor |
auf Bestellung 282 Stücke: Lieferzeit 10-14 Tag (e) |
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IAUCN04S7N006TATMA1 | Infineon Technologies |
Description: IAUCN04S7N006TATMA1 Packaging: Cut Tape (CT) Package / Case: 10-LSOP (0.209", 5.30mm Width) Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Power Dissipation (Max): 205W (Tc) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 146 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10040 pF @ 20 V Qualification: AEC-Q101 |
auf Bestellung 2790 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IAUCN04S7N006TATMA1 |
|
Hersteller: Infineon Technologies
MOSFETs OptiMOS 7 Power-Transistor
MOSFETs OptiMOS 7 Power-Transistor
auf Bestellung 282 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.39 EUR |
| 10+ | 4.19 EUR |
| 100+ | 3.28 EUR |
| 500+ | 2.75 EUR |
| 1000+ | 2.56 EUR |
| 2000+ | 2.15 EUR |
| IAUCN04S7N006TATMA1 |
|
Hersteller: Infineon Technologies
Description: IAUCN04S7N006TATMA1
Packaging: Cut Tape (CT)
Package / Case: 10-LSOP (0.209", 5.30mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Power Dissipation (Max): 205W (Tc)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 146 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10040 pF @ 20 V
Qualification: AEC-Q101
Description: IAUCN04S7N006TATMA1
Packaging: Cut Tape (CT)
Package / Case: 10-LSOP (0.209", 5.30mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Power Dissipation (Max): 205W (Tc)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 146 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10040 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 2790 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7 EUR |
| 10+ | 4.57 EUR |
| 50+ | 3.53 EUR |
| 100+ | 3.2 EUR |
| 500+ | 2.62 EUR |