IAUCN04S7N010GATMA1 Infineon Technologies
auf Bestellung 550 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.19 EUR |
| 10+ | 2.04 EUR |
| 100+ | 1.41 EUR |
| 500+ | 1.19 EUR |
| 1000+ | 1.01 EUR |
| 5000+ | 0.95 EUR |
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Technische Details IAUCN04S7N010GATMA1 Infineon Technologies
Description: IAUCN04S7N010GATMA1, Packaging: Tray, Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 175A (Tj), Rds On (Max) @ Id, Vgs: 1.04mOhm @ 88A, 10V, Power Dissipation (Max): 123W (Tc), Vgs(th) (Max) @ Id: 3V @ 50µA, Supplier Device Package: PG-THSOG-4-1, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 76.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5026 pF @ 20 V, Qualification: AEC-Q101.
Weitere Produktangebote IAUCN04S7N010GATMA1 nach Preis ab 1.4 EUR bis 3.92 EUR
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IAUCN04S7N010GATMA1 | Hersteller : Infineon Technologies |
 Description: IAUCN04S7N010GATMA1Packaging: Tray Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 175A (Tj) Rds On (Max) @ Id, Vgs: 1.04mOhm @ 88A, 10V Power Dissipation (Max): 123W (Tc) Vgs(th) (Max) @ Id: 3V @ 50µA Supplier Device Package: PG-THSOG-4-1 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 76.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5026 pF @ 20 V Qualification: AEC-Q101 |
auf Bestellung 980 Stücke: Lieferzeit 10-14 Tag (e) |
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