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IAUCN04S7N024HATMA1

IAUCN04S7N024HATMA1 Infineon Technologies

infineon-iaucn04s7n024d-datasheet-en.pdf
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V)
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: PG-TDSON-8-56
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Rds On (Max) @ Id, Vgs: 2.46mOhm @ 50A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2226pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 100A (Tj)
Drain to Source Voltage (Vdss): 40V
Power - Max: 75W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
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500+1.9 EUR
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Technische Details IAUCN04S7N024HATMA1 Infineon Technologies

Description: MOSFET_(20V 40V), Operating Temperature: -55°C ~ 175°C (TJ), Configuration: 2 N-Channel, Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive, Supplier Device Package: PG-TDSON-8-56, Vgs(th) (Max) @ Id: 3V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V, Rds On (Max) @ Id, Vgs: 2.46mOhm @ 50A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 2226pF @ 20V, Current - Continuous Drain (Id) @ 25°C: 100A (Tj), Drain to Source Voltage (Vdss): 40V, Power - Max: 75W (Tc), Technology: MOSFET (Metal Oxide).

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IAUCN04S7N024HATMA1 IAUCN04S7N024HATMA1 Infineon Technologies infineon-iaucn04s7n024d-datasheet-en.pdf Description: MOSFET_(20V 40V)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: PG-TDSON-8-56
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Rds On (Max) @ Id, Vgs: 2.46mOhm @ 50A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2226pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 100A (Tj)
Drain to Source Voltage (Vdss): 40V
Power - Max: 75W (Tc)
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IAUCN04S7N024HATMA1 infineon-iaucn04s7n024d-datasheet-en.pdf
IAUCN04S7N024HATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: PG-TDSON-8-56
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Rds On (Max) @ Id, Vgs: 2.46mOhm @ 50A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2226pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 100A (Tj)
Drain to Source Voltage (Vdss): 40V
Power - Max: 75W (Tc)
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH