IAUCN04S7N040HATMA1 Infineon Technologies
| Anzahl | Preis |
|---|---|
| 1+ | 2.92 EUR |
| 10+ | 1.87 EUR |
| 100+ | 1.29 EUR |
| 500+ | 1.1 EUR |
| 1000+ | 0.92 EUR |
| 2500+ | 0.84 EUR |
| 5000+ | 0.79 EUR |
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Technische Details IAUCN04S7N040HATMA1 Infineon Technologies
Description: MOSFET_(20V 40V), Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 52W (Tc), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 82A (Tj), Input Capacitance (Ciss) (Max) @ Vds: 1177pF @ 20V, Rds On (Max) @ Id, Vgs: 4.01mOhm @ 45A, 10V, Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 15µA, Supplier Device Package: PG-TDSON-8-56, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote IAUCN04S7N040HATMA1 nach Preis ab 1.1 EUR bis 3.22 EUR
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IAUCN04S7N040HATMA1 | Infineon Technologies |
 Description: MOSFET_(20V 40V)Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 52W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 82A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 1177pF @ 20V Rds On (Max) @ Id, Vgs: 4.01mOhm @ 45A, 10V Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Vgs(th) (Max) @ Id: 3V @ 15µA Supplier Device Package: PG-TDSON-8-56 Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 945 Stücke: Lieferzeit 10-14 Tag (e) |
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| IAUCN04S7N040HATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 52W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 82A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 1177pF @ 20V
Rds On (Max) @ Id, Vgs: 4.01mOhm @ 45A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 15µA
Supplier Device Package: PG-TDSON-8-56
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 52W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 82A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 1177pF @ 20V
Rds On (Max) @ Id, Vgs: 4.01mOhm @ 45A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 15µA
Supplier Device Package: PG-TDSON-8-56
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 945 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 3.22 EUR |
| 10+ | 2.06 EUR |
| 100+ | 1.39 EUR |
| 500+ | 1.1 EUR |