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IAUCN04S7N054HATMA1

IAUCN04S7N054HATMA1 Infineon Technologies

infineon-iaucn04s7n054h-datasheet-en.pdf
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 40W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 62A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 798pF @ 20V
Rds On (Max) @ Id, Vgs: 5.41mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 10µA
Supplier Device Package: PG-TDSON-8-57
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5000+0.74 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IAUCN04S7N054HATMA1 Infineon Technologies

Description: MOSFET_(20V 40V), Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 40W (Tc), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 62A (Tj), Input Capacitance (Ciss) (Max) @ Vds: 798pF @ 20V, Rds On (Max) @ Id, Vgs: 5.41mOhm @ 30A, 10V, Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 10µA, Supplier Device Package: PG-TDSON-8-57, Grade: Automotive, Qualification: AEC-Q101.

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IAUCN04S7N054HATMA1 IAUCN04S7N054HATMA1 Infineon Technologies infineon-iaucn04s7n054h-datasheet-en.pdf MOSFETs OptiMOS 7 Power-Transistor
auf Bestellung 700 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.71 EUR
10+1.71 EUR
100+1.15 EUR
500+0.94 EUR
1000+0.82 EUR
2500+0.76 EUR
5000+0.68 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IAUCN04S7N054HATMA1 IAUCN04S7N054HATMA1 Infineon Technologies infineon-iaucn04s7n054h-datasheet-en.pdf Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 40W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 62A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 798pF @ 20V
Rds On (Max) @ Id, Vgs: 5.41mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 10µA
Supplier Device Package: PG-TDSON-8-57
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.89 EUR
10+1.83 EUR
100+1.23 EUR
500+0.97 EUR
1000+0.89 EUR
2000+0.83 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IAUCN04S7N054HATMA1 infineon-iaucn04s7n054h-datasheet-en.pdf
IAUCN04S7N054HATMA1
Hersteller: Infineon Technologies
MOSFETs OptiMOS 7 Power-Transistor
auf Bestellung 700 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+2.71 EUR
10+1.71 EUR
100+1.15 EUR
500+0.94 EUR
1000+0.82 EUR
2500+0.76 EUR
5000+0.68 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IAUCN04S7N054HATMA1 infineon-iaucn04s7n054h-datasheet-en.pdf
IAUCN04S7N054HATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 40W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 62A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 798pF @ 20V
Rds On (Max) @ Id, Vgs: 5.41mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 10µA
Supplier Device Package: PG-TDSON-8-57
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
7+2.89 EUR
10+1.83 EUR
100+1.23 EUR
500+0.97 EUR
1000+0.89 EUR
2000+0.83 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH