IAUCN08S7L013ATMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET_(75V 120V(
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 293A (Tj)
Rds On (Max) @ Id, Vgs: 1.26mOhm @ 88A, 10V
Power Dissipation (Max): 219W (Tc)
Vgs(th) (Max) @ Id: 2V @ 131µA
Supplier Device Package: PG-TDSON-8-53
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9554 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 2443 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 6.34 EUR |
| 10+ | 4.18 EUR |
| 100+ | 2.95 EUR |
| 500+ | 2.69 EUR |
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Technische Details IAUCN08S7L013ATMA1 Infineon Technologies
Description: MOSFET_(75V 120V(, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 293A (Tj), Rds On (Max) @ Id, Vgs: 1.26mOhm @ 88A, 10V, Power Dissipation (Max): 219W (Tc), Vgs(th) (Max) @ Id: 2V @ 131µA, Supplier Device Package: PG-TDSON-8-53, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9554 pF @ 40 V, Qualification: AEC-Q101.
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IAUCN08S7L013ATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET_(75V 120V( Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 293A (Tj) Rds On (Max) @ Id, Vgs: 1.26mOhm @ 88A, 10V Power Dissipation (Max): 219W (Tc) Vgs(th) (Max) @ Id: 2V @ 131µA Supplier Device Package: PG-TDSON-8-53 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9554 pF @ 40 V Qualification: AEC-Q101 |
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IAUCN08S7L013ATMA1 | Hersteller : Infineon Technologies |
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