IAUCN08S7N034ATMA1 Infineon Technologies
auf Bestellung 2870 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.71 EUR |
| 10+ | 2.36 EUR |
| 100+ | 1.61 EUR |
| 500+ | 1.35 EUR |
| 1000+ | 1.25 EUR |
| 5000+ | 1.06 EUR |
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Technische Details IAUCN08S7N034ATMA1 Infineon Technologies
Description: MOSFET_(75V 120V(, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A, Supplier Device Package: PG-TDSON-8-34, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V, Qualification: AEC-Q101.
Weitere Produktangebote IAUCN08S7N034ATMA1 nach Preis ab 1.49 EUR bis 4.21 EUR
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IAUCN08S7N034ATMA1 | Hersteller : Infineon Technologies |
 Description: MOSFET_(75V 120V(Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A Supplier Device Package: PG-TDSON-8-34 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V Qualification: AEC-Q101 |
auf Bestellung 4047 Stücke: Lieferzeit 10-14 Tag (e) |
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IAUCN08S7N034ATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET_(75V 120V( Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A Supplier Device Package: PG-TDSON-8-34 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V Qualification: AEC-Q101 |
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