Produkte > INFINEON TECHNOLOGIES > IAUCN10S7L180ATMA1
IAUCN10S7L180ATMA1

IAUCN10S7L180ATMA1 Infineon Technologies

Infineon_IAUCN10S7L180_DataSheet_v01_00_EN-3536871.pdf Hersteller: Infineon Technologies
MOSFETs MOSFET_(75V 120V(
auf Bestellung 4970 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.13 EUR
10+1.49 EUR
100+1.16 EUR
500+0.98 EUR
1000+0.80 EUR
2500+0.75 EUR
5000+0.73 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details IAUCN10S7L180ATMA1 Infineon Technologies

Description: IAUCN10S7L180ATMA1, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 39A (Tj), Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V, Power Dissipation (Max): 58W (Tc), Vgs(th) (Max) @ Id: 2V @ 14µA, Supplier Device Package: PG-TDSON-8-34, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 868 pF @ 50 V, Qualification: AEC-Q101.

Weitere Produktangebote IAUCN10S7L180ATMA1 nach Preis ab 0.77 EUR bis 2.57 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
IAUCN10S7L180ATMA1 IAUCN10S7L180ATMA1 Hersteller : Infineon Technologies Description: IAUCN10S7L180ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tj)
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 14µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 868 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 3995 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.57 EUR
11+1.63 EUR
100+1.09 EUR
500+0.86 EUR
1000+0.79 EUR
2000+0.77 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IAUCN10S7L180ATMA1 IAUCN10S7L180ATMA1 Hersteller : Infineon Technologies Description: IAUCN10S7L180ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tj)
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 14µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 868 pF @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH