IAUMN04S7N005GAUMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250A (Tj)
Rds On (Max) @ Id, Vgs: 0.5mOhm @ 125A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 3V @ 140µA
Supplier Device Package: PG-HSOG-4-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12674 pF @ 20 V
Qualification: AEC-Q101
| Anzahl | Preis |
|---|---|
| 2000+ | 2.51 EUR |
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Technische Details IAUMN04S7N005GAUMA1 Infineon Technologies
Description: MOSFET_(20V 40V), Packaging: Tape & Reel (TR), Package / Case: 4-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 250A (Tj), Rds On (Max) @ Id, Vgs: 0.5mOhm @ 125A, 10V, Power Dissipation (Max): 240W (Tc), Vgs(th) (Max) @ Id: 3V @ 140µA, Supplier Device Package: PG-HSOG-4-1, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 12674 pF @ 20 V, Qualification: AEC-Q101.
Weitere Produktangebote IAUMN04S7N005GAUMA1 nach Preis ab 2.6 EUR bis 7 EUR
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IAUMN04S7N005GAUMA1 | Hersteller : Infineon Technologies |
Description: MOSFET_(20V 40V) Packaging: Cut Tape (CT) Package / Case: 4-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 250A (Tj) Rds On (Max) @ Id, Vgs: 0.5mOhm @ 125A, 10V Power Dissipation (Max): 240W (Tc) Vgs(th) (Max) @ Id: 3V @ 140µA Supplier Device Package: PG-HSOG-4-1 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12674 pF @ 20 V Qualification: AEC-Q101 |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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IAUMN04S7N005GAUMA1 | Hersteller : Infineon Technologies |
MOSFETs 250 A, 40 V, Automotive Power MOSFET with OptiMOS-7 Technology |
auf Bestellung 2698 Stücke: Lieferzeit 10-14 Tag (e) |
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IAUMN04S7N005GAUMA1 | Hersteller : Infineon Technologies |
Description: MOSFET_(20V 40V) Package / Case: 4-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 250A (Tj) Rds On (Max) @ Id, Vgs: 0.5mOhm @ 125A, 10V Power Dissipation (Max): 240W (Tc) Vgs(th) (Max) @ Id: 3V @ 140µA Supplier Device Package: PG-HSOG-4-1 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12674 pF @ 20 V Qualification: AEC-Q101 |
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