IAUMN04S7N005GAUMA1 Infineon Technologies
Hersteller: Infineon TechnologiesMOSFETs 250 A, 40 V, Automotive Power MOSFET with OptiMOS-7 Technology
auf Bestellung 678 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 6.74 EUR |
| 10+ | 4.51 EUR |
| 100+ | 3.47 EUR |
| 500+ | 3.08 EUR |
| 1000+ | 2.92 EUR |
| 2000+ | 2.46 EUR |
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Technische Details IAUMN04S7N005GAUMA1 Infineon Technologies
Description: MOSFET_(20V 40V), Packaging: Tray, Package / Case: 4-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 250A (Tj), Rds On (Max) @ Id, Vgs: 0.5mOhm @ 125A, 10V, Power Dissipation (Max): 240W (Tc), Vgs(th) (Max) @ Id: 3V @ 140µA, Supplier Device Package: PG-HSOG-4-1, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 12674 pF @ 20 V, Qualification: AEC-Q101.
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IAUMN04S7N005GAUMA1 | Hersteller : Infineon Technologies |
Description: MOSFET_(20V 40V) Packaging: Tray Package / Case: 4-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 250A (Tj) Rds On (Max) @ Id, Vgs: 0.5mOhm @ 125A, 10V Power Dissipation (Max): 240W (Tc) Vgs(th) (Max) @ Id: 3V @ 140µA Supplier Device Package: PG-HSOG-4-1 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12674 pF @ 20 V Qualification: AEC-Q101 |
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