IAUMN08S5N013GAUMA1 Infineon Technologies
| Anzahl | Preis |
|---|---|
| 1+ | 8.45 EUR |
| 10+ | 5.63 EUR |
| 100+ | 4.03 EUR |
| 500+ | 3.71 EUR |
| 1000+ | 3.61 EUR |
| 2000+ | 3.47 EUR |
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Technische Details IAUMN08S5N013GAUMA1 Infineon Technologies
Description: MOSFET_(75V 120V(, Packaging: Cut Tape (CT), Package / Case: 4-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 250A (Tj), Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V, Power Dissipation (Max): 307W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 214µA, Supplier Device Package: PG-HSOG-4-1, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 12496 pF @ 40 V, Qualification: AEC-Q101.
Weitere Produktangebote IAUMN08S5N013GAUMA1 nach Preis ab 3.67 EUR bis 6.55 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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| IAUMN08S5N013GAUMA1 | Infineon Technologies |
 Description: MOSFET_(75V 120V(Packaging: Cut Tape (CT) Package / Case: 4-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 250A (Tj) Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V Power Dissipation (Max): 307W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 214µA Supplier Device Package: PG-HSOG-4-1 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12496 pF @ 40 V Qualification: AEC-Q101 |
auf Bestellung 1990 Stücke: Lieferzeit 10-14 Tag (e) |
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| IAUMN08S5N013GAUMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET_(75V 120V(
Packaging: Cut Tape (CT)
Package / Case: 4-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250A (Tj)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
Power Dissipation (Max): 307W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 214µA
Supplier Device Package: PG-HSOG-4-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12496 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET_(75V 120V(
Packaging: Cut Tape (CT)
Package / Case: 4-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250A (Tj)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
Power Dissipation (Max): 307W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 214µA
Supplier Device Package: PG-HSOG-4-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12496 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 1990 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 6.55 EUR |
| 10+ | 4.95 EUR |
| 25+ | 4.55 EUR |
| 100+ | 4.11 EUR |
| 250+ | 3.9 EUR |
| 500+ | 3.78 EUR |
| 1000+ | 3.67 EUR |