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IAUS165N08S5N029ATMA1

IAUS165N08S5N029ATMA1 Infineon Technologies


Infineon-IAUS165N08S5N029-DS-v01_00-EN.pdf?fileId=5546d462636cc8fb016440702dce6199 Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 165A HSOG-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 165A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 80A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 108µA
Supplier Device Package: PG-HSOG-8-1
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6370 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 1616 Stücke:

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Anzahl Preis ohne MwSt
4+5.44 EUR
10+ 4.56 EUR
100+ 3.69 EUR
500+ 3.28 EUR
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Technische Details IAUS165N08S5N029ATMA1 Infineon Technologies

Description: MOSFET N-CH 80V 165A HSOG-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSMD, Gull Wing, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 165A (Tc), Rds On (Max) @ Id, Vgs: 2.9mOhm @ 80A, 10V, Power Dissipation (Max): 167W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 108µA, Supplier Device Package: PG-HSOG-8-1, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6370 pF @ 40 V, Qualification: AEC-Q101.

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IAUS165N08S5N029ATMA1 IAUS165N08S5N029ATMA1 Hersteller : Infineon Technologies Infineon-IAUS165N08S5N029-DS-v01_00-EN.pdf?fileId=5546d462636cc8fb016440702dce6199 MOSFET MOSFET_(75V 120V(
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IAUS165N08S5N029ATMA1 IAUS165N08S5N029ATMA1 Hersteller : Infineon Technologies infineon-iaus165n08s5n029-ds-v01_00-en.pdf Trans MOSFET N-CH 80V 165A Automotive 9-Pin(8+Tab) HSOG T/R
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IAUS165N08S5N029ATMA1 IAUS165N08S5N029ATMA1 Hersteller : INFINEON TECHNOLOGIES IAUS165N08S5N029.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 165A; Idm: 660A; 167W
Case: PG-HSOG-8
Mounting: SMD
Kind of package: reel; tape
Technology: OptiMOS™ 5
On-state resistance: 2.9mΩ
Pulsed drain current: 660A
Power dissipation: 167W
Gate charge: 31nC
Polarisation: unipolar
Drain current: 165A
Kind of channel: enhanced
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IAUS165N08S5N029ATMA1 IAUS165N08S5N029ATMA1 Hersteller : Infineon Technologies Infineon-IAUS165N08S5N029-DS-v01_00-EN.pdf?fileId=5546d462636cc8fb016440702dce6199 Description: MOSFET N-CH 80V 165A HSOG-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 165A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 80A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 108µA
Supplier Device Package: PG-HSOG-8-1
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6370 pF @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
IAUS165N08S5N029ATMA1 IAUS165N08S5N029ATMA1 Hersteller : INFINEON TECHNOLOGIES IAUS165N08S5N029.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 165A; Idm: 660A; 167W
Case: PG-HSOG-8
Mounting: SMD
Kind of package: reel; tape
Technology: OptiMOS™ 5
On-state resistance: 2.9mΩ
Pulsed drain current: 660A
Power dissipation: 167W
Gate charge: 31nC
Polarisation: unipolar
Drain current: 165A
Kind of channel: enhanced
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Produkt ist nicht verfügbar