IAUS165N08S5N029ATMA1 Infineon Technologies
auf Bestellung 886 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 5.53 EUR |
| 10+ | 4.65 EUR |
| 25+ | 4.42 EUR |
| 100+ | 3.77 EUR |
| 250+ | 3.56 EUR |
| 500+ | 3.34 EUR |
| 1000+ | 2.87 EUR |
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Technische Details IAUS165N08S5N029ATMA1 Infineon Technologies
Description: MOSFET N-CH 80V 165A HSOG-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSMD, Gull Wing, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 165A (Tc), Rds On (Max) @ Id, Vgs: 2.9mOhm @ 80A, 10V, Power Dissipation (Max): 167W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 108µA, Supplier Device Package: PG-HSOG-8-1, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6370 pF @ 40 V, Qualification: AEC-Q101.
Weitere Produktangebote IAUS165N08S5N029ATMA1 nach Preis ab 3.36 EUR bis 5.56 EUR
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IAUS165N08S5N029ATMA1 | Hersteller : Infineon Technologies |
 Description: MOSFET N-CH 80V 165A HSOG-8Packaging: Cut Tape (CT) Package / Case: 8-PowerSMD, Gull Wing Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 165A (Tc) Rds On (Max) @ Id, Vgs: 2.9mOhm @ 80A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 108µA Supplier Device Package: PG-HSOG-8-1 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6370 pF @ 40 V Qualification: AEC-Q101 |
auf Bestellung 1374 Stücke: Lieferzeit 10-14 Tag (e) |
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IAUS165N08S5N029ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 80V 165A Automotive 9-Pin(8+Tab) HSOG T/R |
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IAUS165N08S5N029ATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 165A; Idm: 660A; 167W Case: PG-HSOG-8 Mounting: SMD Kind of package: reel; tape Technology: OptiMOS™ 5 Pulsed drain current: 660A Drain-source voltage: 80V Drain current: 165A On-state resistance: 2.9mΩ Type of transistor: N-MOSFET Power dissipation: 167W Polarisation: unipolar Gate charge: 31nC Kind of channel: enhanced Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
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IAUS165N08S5N029ATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 80V 165A HSOG-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerSMD, Gull Wing Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 165A (Tc) Rds On (Max) @ Id, Vgs: 2.9mOhm @ 80A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 108µA Supplier Device Package: PG-HSOG-8-1 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6370 pF @ 40 V Qualification: AEC-Q101 |
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IAUS165N08S5N029ATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 165A; Idm: 660A; 167W Case: PG-HSOG-8 Mounting: SMD Kind of package: reel; tape Technology: OptiMOS™ 5 Pulsed drain current: 660A Drain-source voltage: 80V Drain current: 165A On-state resistance: 2.9mΩ Type of transistor: N-MOSFET Power dissipation: 167W Polarisation: unipolar Gate charge: 31nC Kind of channel: enhanced Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |