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IAUS200N08S5N023ATMA1

IAUS200N08S5N023ATMA1 Infineon Technologies

Infineon_IAUS200N08S5N023_DataSheet_v01_01_EN.pdf
Hersteller: Infineon Technologies
MOSFETs MOSFET_(75V 120V(
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Technische Details IAUS200N08S5N023ATMA1 Infineon Technologies

Description: MOSFET N-CH 80V 200A HSOG-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSMD, Gull Wing, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 200A (Tc), Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V, Power Dissipation (Max): 200W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 130µA, Supplier Device Package: PG-HSOG-8-1, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7670 pF @ 40 V, Qualification: AEC-Q101.

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IAUS200N08S5N023ATMA1 IAUS200N08S5N023ATMA1 Infineon Technologies IAUS200N08S5N023.pdf Description: MOSFET N-CH 80V 200A HSOG-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 130µA
Supplier Device Package: PG-HSOG-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7670 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 332 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.58 EUR
10+4.34 EUR
100+3.07 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IAUS200N08S5N023ATMA1 Infineon Technologies IAUS200N08S5N023.pdf N-канальний ПТ, Udss, В = 80, Id = 200 А, Ciss, пФ @ Uds, В = 7670 @ 40, Qg, нКл = 110, Rds = 2,3 мОм, Ugs(th) = 3,8 В, Р, Вт = 200, Тексп, °C = -55...+175, Тип монт. = smd,... Транзистори Корпус: PowerSMD-8 Од. вим: шт
Anzahl je Verpackung: 1800 Stücke
verfügbar 20 Stücke:
Im Einkaufswagen  Stück im Wert von  UAH
IAUS200N08S5N023ATMA1 IAUS200N08S5N023.pdf
IAUS200N08S5N023ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 200A HSOG-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 130µA
Supplier Device Package: PG-HSOG-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7670 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 332 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+6.58 EUR
10+4.34 EUR
100+3.07 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IAUS200N08S5N023ATMA1 IAUS200N08S5N023.pdf
Hersteller: Infineon Technologies
N-канальний ПТ, Udss, В = 80, Id = 200 А, Ciss, пФ @ Uds, В = 7670 @ 40, Qg, нКл = 110, Rds = 2,3 мОм, Ugs(th) = 3,8 В, Р, Вт = 200, Тексп, °C = -55...+175, Тип монт. = smd,... Транзистори Корпус: PowerSMD-8 Од. вим: шт
Anzahl je Verpackung: 1800 Stücke
verfügbar 20 Stücke:
Im Einkaufswagen  Stück im Wert von  UAH