IAUT150N10S5N035ATMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET N-CH 100V 150A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 75A, 10V
Power Dissipation (Max): 166W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 110µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6110 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2000+ | 2.07 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IAUT150N10S5N035ATMA1 Infineon Technologies
Description: MOSFET N-CH 100V 150A 8HSOF, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 150A (Tc), Rds On (Max) @ Id, Vgs: 3.5mOhm @ 75A, 10V, Power Dissipation (Max): 166W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 110µA, Supplier Device Package: PG-HSOF-8-1, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6110 pF @ 50 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote IAUT150N10S5N035ATMA1 nach Preis ab 2.09 EUR bis 5.1 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IAUT150N10S5N035ATMA1 | Hersteller : Infineon Technologies |
MOSFETs MOSFET_(75V 120V( |
auf Bestellung 7394 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
IAUT150N10S5N035ATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 100V 150A 8HSOF Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 75A, 10V Power Dissipation (Max): 166W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 110µA Supplier Device Package: PG-HSOF-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6110 pF @ 50 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 5660 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
 |
IAUT150N10S5N035ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 100V 150A Automotive 9-Pin(8+Tab) HSOF T/R |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||||
 |
IAUT150N10S5N035ATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 150A; 166W; PG-HSOF-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 150A Power dissipation: 166W Case: PG-HSOF-8 Gate-source voltage: ±20V On-state resistance: 3.5mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhancement Technology: OptiMOS™ 5 Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||||
 |
IAUT150N10S5N035ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 100V 150A Automotive AEC-Q101 9-Pin(8+Tab) HSOF T/R |
Produkt ist nicht verfügbar |
|||||||||||||||
|
|
IAUT150N10S5N035ATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 150A; 166W; PG-HSOF-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 150A Power dissipation: 166W Case: PG-HSOF-8 Gate-source voltage: ±20V On-state resistance: 3.5mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhancement Technology: OptiMOS™ 5 |
Produkt ist nicht verfügbar |