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IAUT200N08S5N023ATMA1

IAUT200N08S5N023ATMA1 Infineon Technologies

Infineon-IAUT200N08S5N023-DS-v01_00-EN.pdf?fileId=5546d4626102d35a01611d61e9ce2ab6
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 200A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 130µA
Supplier Device Package: PG-HSOF-8-1
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7670 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2000+2.11 EUR
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IAUT200N08S5N023ATMA1 Infineon Technologies

Description: MOSFET N-CH 80V 200A 8HSOF, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 200A (Tc), Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V, Power Dissipation (Max): 200W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 130µA, Supplier Device Package: PG-HSOF-8-1, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7670 pF @ 40 V, Qualification: AEC-Q101.

Weitere Produktangebote IAUT200N08S5N023ATMA1 nach Preis ab 2.36 EUR bis 6.51 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
IAUT200N08S5N023ATMA1 IAUT200N08S5N023ATMA1 Infineon Technologies Infineon-IAUT200N08S5N023-DS-v01_00-EN.pdf?fileId=5546d4626102d35a01611d61e9ce2ab6 Description: MOSFET N-CH 80V 200A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 130µA
Supplier Device Package: PG-HSOF-8-1
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7670 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 6401 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.16 EUR
10+4.06 EUR
100+2.86 EUR
500+2.59 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IAUT200N08S5N023ATMA1 IAUT200N08S5N023ATMA1 Infineon Technologies Infineon_IAUT200N08S5N023_DataSheet_v01_10_EN.pdf MOSFETs MOSFET_(75V 120V(
auf Bestellung 6045 Stücke:
Lieferzeit 10-14 Tag (e)
1+6.51 EUR
10+4.03 EUR
100+3.01 EUR
500+2.53 EUR
2000+2.36 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IAUT200N08S5N023ATMA1 Infineon-IAUT200N08S5N023-DS-v01_00-EN.pdf?fileId=5546d4626102d35a01611d61e9ce2ab6
IAUT200N08S5N023ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 200A 8HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 130µA
Supplier Device Package: PG-HSOF-8-1
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7670 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 6401 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+6.16 EUR
10+4.06 EUR
100+2.86 EUR
500+2.59 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IAUT200N08S5N023ATMA1 Infineon_IAUT200N08S5N023_DataSheet_v01_10_EN.pdf
IAUT200N08S5N023ATMA1
Hersteller: Infineon Technologies
MOSFETs MOSFET_(75V 120V(
auf Bestellung 6045 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+6.51 EUR
10+4.03 EUR
100+3.01 EUR
500+2.53 EUR
2000+2.36 EUR
Im Einkaufswagen  Stück im Wert von  UAH