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IAUT300N08S5N014 Infineon Technologies



Hersteller: Infineon Technologies
Infineon MOSFET_(75V 120V(
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Technische Details IAUT300N08S5N014 Infineon Technologies

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 80V; 300A; 300W; PG-HSOF-8, Drain current: 300A, Kind of channel: enhancement, Drain-source voltage: 80V, Type of transistor: N-MOSFET, Gate-source voltage: ±20V, Kind of package: reel; tape, Case: PG-HSOF-8, On-state resistance: 1.4mΩ, Mounting: SMD, Power dissipation: 300W, Gate charge: 60nC, Polarisation: unipolar, Technology: OptiMOS™ 5.

Weitere Produktangebote IAUT300N08S5N014

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
IAUT300N08S5N014ATMA1 IAUT300N08S5N014ATMA1 INFINEON TECHNOLOGIES IAUT300N08S5N014.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 300A; 300W; PG-HSOF-8
Drain current: 300A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PG-HSOF-8
On-state resistance: 1.4mΩ
Mounting: SMD
Power dissipation: 300W
Gate charge: 60nC
Polarisation: unipolar
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IAUT300N08S5N014ATMA1 IAUT300N08S5N014.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 300A; 300W; PG-HSOF-8
Drain current: 300A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PG-HSOF-8
On-state resistance: 1.4mΩ
Mounting: SMD
Power dissipation: 300W
Gate charge: 60nC
Polarisation: unipolar
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH