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IAUT300N10S5N015 Infineon Technologies



Hersteller: Infineon Technologies
MOSFET MOSFET_(75V 120V(
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Technische Details IAUT300N10S5N015 Infineon Technologies

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 300A; 375W; PG-HSOF-8, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 300A, Case: PG-HSOF-8, Mounting: SMD, Kind of package: reel; tape, Kind of channel: enhancement, Technology: OptiMOS™ 5, Gate-source voltage: ±20V, On-state resistance: 1.5mΩ, Power dissipation: 375W, Gate charge: 68nC.

Weitere Produktangebote IAUT300N10S5N015

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
IAUT300N10S5N015ATMA1 IAUT300N10S5N015ATMA1 INFINEON TECHNOLOGIES IAUT300N10S5N015.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 300A; 375W; PG-HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 300A
Case: PG-HSOF-8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Power dissipation: 375W
Gate charge: 68nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IAUT300N10S5N015ATMA1 IAUT300N10S5N015.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 300A; 375W; PG-HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 300A
Case: PG-HSOF-8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Power dissipation: 375W
Gate charge: 68nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH