IAUTN06S5N008GATMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET_)40V 60V)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 20280 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 273 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Grade: Automotive
Supplier Device Package: PG-HSOG-8-1
Power Dissipation (Max): 358W (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Gull Wing
Packaging: Cut Tape (CT)
| Anzahl | Preis |
|---|---|
| 3+ | 7.48 EUR |
| 10+ | 5.65 EUR |
| 100+ | 4.98 EUR |
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Technische Details IAUTN06S5N008GATMA1 Infineon Technologies
Description: MOSFET_)40V 60V), Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 20280 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 273 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Grade: Automotive, Supplier Device Package: PG-HSOG-8-1, Power Dissipation (Max): 358W (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerSMD, Gull Wing, Packaging: Tape & Reel (TR).
Weitere Produktangebote IAUTN06S5N008GATMA1 nach Preis ab 4.73 EUR bis 10.05 EUR
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IAUTN06S5N008GATMA1 | Hersteller : Infineon Technologies |
MOSFETs MOSFET_)40V 60V) |
auf Bestellung 1770 Stücke: Lieferzeit 10-14 Tag (e) |
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