IAUTN08S5N012LATMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET 2N-CH 80V 300A PG-HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel, Common Drain, Common Source
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 375W (Tc)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 300A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 15340pF @ 40V
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 100A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs(th) (Max) @ Id: 3.3V @ 275µA
Supplier Device Package: PG-HSOF-8-2
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1981 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 9.13 EUR |
| 10+ | 6.97 EUR |
| 25+ | 6.43 EUR |
| 100+ | 5.84 EUR |
| 250+ | 5.56 EUR |
| 500+ | 5.39 EUR |
| 1000+ | 5.25 EUR |
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Technische Details IAUTN08S5N012LATMA1 Infineon Technologies
Description: MOSFET 2N-CH 80V 300A PG-HSOF, Packaging: Cut Tape (CT), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel, Common Drain, Common Source, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 375W (Tc), Drain to Source Voltage (Vdss): 80V, Current - Continuous Drain (Id) @ 25°C: 300A (Tj), Input Capacitance (Ciss) (Max) @ Vds: 15340pF @ 40V, Rds On (Max) @ Id, Vgs: 1.15mOhm @ 100A, 10V, Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V, Vgs(th) (Max) @ Id: 3.3V @ 275µA, Supplier Device Package: PG-HSOF-8-2, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote IAUTN08S5N012LATMA1
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| IAUTN08S5N012LATMA1 | Hersteller : Infineon Technologies |
Automotive MOSFET |
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IAUTN08S5N012LATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET 2N-CH 80V 300A PG-HSOF Packaging: Tray Package / Case: 8-PowerSFN Mounting Type: Surface Mount Configuration: 2 N-Channel, Common Drain, Common Source Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 375W (Tc) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 300A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 15340pF @ 40V Rds On (Max) @ Id, Vgs: 1.15mOhm @ 100A, 10V Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Vgs(th) (Max) @ Id: 3.3V @ 275µA Supplier Device Package: PG-HSOF-8-2 Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |