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IAUTN08S5N012LATMA1

IAUTN08S5N012LATMA1 Infineon Technologies

Infineon-IAUTN08S5N012L-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018ef669549208cf Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 80V 300A PG-HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel, Common Drain, Common Source
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 375W (Tc)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 300A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 15340pF @ 40V
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 100A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs(th) (Max) @ Id: 3.3V @ 275µA
Supplier Device Package: PG-HSOF-8-2
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1981 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.13 EUR
10+6.97 EUR
25+6.43 EUR
100+5.84 EUR
250+5.56 EUR
500+5.39 EUR
1000+5.25 EUR
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Technische Details IAUTN08S5N012LATMA1 Infineon Technologies

Description: MOSFET 2N-CH 80V 300A PG-HSOF, Packaging: Cut Tape (CT), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel, Common Drain, Common Source, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 375W (Tc), Drain to Source Voltage (Vdss): 80V, Current - Continuous Drain (Id) @ 25°C: 300A (Tj), Input Capacitance (Ciss) (Max) @ Vds: 15340pF @ 40V, Rds On (Max) @ Id, Vgs: 1.15mOhm @ 100A, 10V, Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V, Vgs(th) (Max) @ Id: 3.3V @ 275µA, Supplier Device Package: PG-HSOF-8-2, Grade: Automotive, Qualification: AEC-Q101.

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IAUTN08S5N012LATMA1 IAUTN08S5N012LATMA1 Hersteller : Infineon Technologies Infineon_IAUTN08S5N012L_DataSheet_v01_00_EN-3512231.pdf MOSFETs MOSFET_(75V 120V(
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IAUTN08S5N012LATMA1 Hersteller : Infineon Technologies infineon-iautn08s5n012l-datasheet-v01_00-en.pdf Automotive MOSFET
Produkt ist nicht verfügbar
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IAUTN08S5N012LATMA1 IAUTN08S5N012LATMA1 Hersteller : Infineon Technologies Infineon-IAUTN08S5N012L-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018ef669549208cf Description: MOSFET 2N-CH 80V 300A PG-HSOF
Packaging: Tray
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel, Common Drain, Common Source
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 375W (Tc)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 300A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 15340pF @ 40V
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 100A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs(th) (Max) @ Id: 3.3V @ 275µA
Supplier Device Package: PG-HSOF-8-2
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH