IAUZ18N10S5L420ATMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET N-CH 100V 18A TSDSON-8-32
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 9A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 8µA
Supplier Device Package: PG-TSDSON-8-32
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 50 V
auf Bestellung 2834 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 11+ | 1.6 EUR |
| 14+ | 1.3 EUR |
| 100+ | 1.01 EUR |
| 500+ | 0.86 EUR |
| 1000+ | 0.7 EUR |
| 2000+ | 0.66 EUR |
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Technische Details IAUZ18N10S5L420ATMA1 Infineon Technologies
Description: MOSFET N-CH 100V 18A TSDSON-8-32, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), Rds On (Max) @ Id, Vgs: 42mOhm @ 9A, 10V, Power Dissipation (Max): 30W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 8µA, Supplier Device Package: PG-TSDSON-8-32, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 50 V.
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| IAUZ18N10S5L420ATMA1 | Hersteller : Infineon Technologies |
MOSFET_(75V,120V( |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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| IAUZ18N10S5L420ATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 13A; Idm: 72A; 30W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 13A Pulsed drain current: 72A Power dissipation: 30W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 42mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: logic level Anzahl je Verpackung: 5000 Stücke |
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IAUZ18N10S5L420ATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 100V 18A TSDSON-8-32 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 42mOhm @ 9A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 8µA Supplier Device Package: PG-TSDSON-8-32 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 50 V |
Produkt ist nicht verfügbar |
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IAUZ18N10S5L420ATMA1 | Hersteller : Infineon Technologies |
MOSFET MOSFET_(75V 120V( |
Produkt ist nicht verfügbar |
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| IAUZ18N10S5L420ATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 13A; Idm: 72A; 30W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 13A Pulsed drain current: 72A Power dissipation: 30W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 42mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: logic level |
Produkt ist nicht verfügbar |