IAUZ18N10S5L420ATMA1 Infineon Technologies
Hersteller: Infineon Technologies
MOSFETs 100 V, N-Ch, 42 m max, Automotive MOSFET, S3O8 (3x3), OptiMOS 5
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.4 EUR |
| 10+ | 1.13 EUR |
| 100+ | 1 EUR |
| 500+ | 0.77 EUR |
| 1000+ | 0.76 EUR |
| 2500+ | 0.73 EUR |
| 5000+ | 0.6 EUR |
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Lieferzeit:
10-14 Tag (e)
Mindestmenge:
2 Stücke
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Technische Details IAUZ18N10S5L420ATMA1 Infineon Technologies
Description: MOSFET N-CH 100V 18A TSDSON-8-32, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), Rds On (Max) @ Id, Vgs: 42mOhm @ 9A, 10V, Power Dissipation (Max): 30W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 8µA, Supplier Device Package: PG-TSDSON-8-32, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 50 V, Qualification: AEC-Q101.
Weitere Produktangebote IAUZ18N10S5L420ATMA1 nach Preis ab 0.77 EUR bis 2.4 EUR
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IAUZ18N10S5L420ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 18A TSDSON-8-32 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 42mOhm @ 9A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 8µA Supplier Device Package: PG-TSDSON-8-32 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 50 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 4923 Stücke: Lieferzeit 10-14 Tag (e) |
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| IAUZ18N10S5L420ATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 18A TSDSON-8-32
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 9A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 8µA
Supplier Device Package: PG-TSDSON-8-32
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 18A TSDSON-8-32
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 9A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 8µA
Supplier Device Package: PG-TSDSON-8-32
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4923 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 2.4 EUR |
| 14+ | 1.51 EUR |
| 50+ | 1.12 EUR |
| 100+ | 1 EUR |
| 500+ | 0.77 EUR |