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IAUZ20N08S5L300ATMA1

IAUZ20N08S5L300ATMA1 Infineon Technologies

Infineon-IAUZ20N08S5L300-DataSheet-v01_00-EN.pdf?fileId=5546d4626f1cf1c5016f1e6316a2012e Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 20A 8TSDSON-32
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 10A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 8µA
Supplier Device Package: PG-TSDSON-8-32
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 599 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.47 EUR
Mindestbestellmenge: 5000
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Technische Details IAUZ20N08S5L300ATMA1 Infineon Technologies

Description: MOSFET N-CH 80V 20A 8TSDSON-32, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 30mOhm @ 10A, 10V, Power Dissipation (Max): 30W (Tc), Vgs(th) (Max) @ Id: 2V @ 8µA, Supplier Device Package: PG-TSDSON-8-32, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 599 pF @ 40 V, Grade: Automotive, Qualification: AEC-Q101.

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IAUZ20N08S5L300ATMA1 IAUZ20N08S5L300ATMA1 Hersteller : Infineon Technologies Infineon_IAUZ20N08S5L300_DataSheet_v01_00_EN-1696510.pdf MOSFETs N
auf Bestellung 8607 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.51 EUR
10+1.23 EUR
100+0.96 EUR
500+0.81 EUR
1000+0.62 EUR
5000+0.59 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IAUZ20N08S5L300ATMA1 IAUZ20N08S5L300ATMA1 Hersteller : Infineon Technologies Infineon-IAUZ20N08S5L300-DataSheet-v01_00-EN.pdf?fileId=5546d4626f1cf1c5016f1e6316a2012e Description: MOSFET N-CH 80V 20A 8TSDSON-32
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 10A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 8µA
Supplier Device Package: PG-TSDSON-8-32
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 599 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 9387 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.95 EUR
15+1.23 EUR
100+0.81 EUR
500+0.63 EUR
1000+0.57 EUR
2000+0.52 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IAUZ20N08S5L300ATMA1 IAUZ20N08S5L300ATMA1 Hersteller : Infineon Technologies infineon-iauz20n08s5l300-datasheet-v01_00-en.pdf Trans MOSFET N-CH 80V 20A Automotive 8-Pin TSDSON EP T/R
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IAUZ20N08S5L300ATMA1 Hersteller : INFINEON TECHNOLOGIES Infineon-IAUZ20N08S5L300-DataSheet-v01_00-EN.pdf?fileId=5546d4626f1cf1c5016f1e6316a2012e IAUZ20N08S5L300 SMD N channel transistors
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