IAUZ30N08S5N186ATMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET_(75V 120V( PG-TSDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tj)
Rds On (Max) @ Id, Vgs: 18.6mOhm @ 15A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 13µA
Supplier Device Package: PG-TSDSON-8-32
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 759 pF @ 40 V
Qualification: AEC-Q101
| Anzahl | Privatkunde |
|---|---|
| 5000+ | 0.62 EUR |
Artikel auf Bestellung
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Lieferzeit:
10-14 Tag (e)
Mindestmenge:
5000 Stücke
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Technische Details IAUZ30N08S5N186ATMA1 Infineon Technologies
Description: MOSFET_(75V 120V( PG-TSDSON-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tj), Rds On (Max) @ Id, Vgs: 18.6mOhm @ 15A, 10V, Power Dissipation (Max): 41W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 13µA, Supplier Device Package: PG-TSDSON-8-32, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 759 pF @ 40 V, Qualification: AEC-Q101.
Weitere Produktangebote IAUZ30N08S5N186ATMA1 nach Preis ab 0.62 EUR bis 2.56 EUR
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IAUZ30N08S5N186ATMA1 | Infineon Technologies |
MOSFETs MOSFET_(75V 120V( |
auf Bestellung 4552 Stücke: Lieferzeit 10-14 Tag (e) |
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IAUZ30N08S5N186ATMA1 | Infineon Technologies |
Description: MOSFET_(75V 120V( PG-TSDSON-8 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tj) Rds On (Max) @ Id, Vgs: 18.6mOhm @ 15A, 10V Power Dissipation (Max): 41W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 13µA Supplier Device Package: PG-TSDSON-8-32 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 759 pF @ 40 V Qualification: AEC-Q101 |
auf Bestellung 6654 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IAUZ30N08S5N186ATMA1 |
|
Hersteller: Infineon Technologies
MOSFETs MOSFET_(75V 120V(
MOSFETs MOSFET_(75V 120V(
auf Bestellung 4552 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.56 EUR |
| 10+ | 1.2 EUR |
| 100+ | 1.07 EUR |
| 500+ | 0.83 EUR |
| 1000+ | 0.82 EUR |
| 2500+ | 0.79 EUR |
| 5000+ | 0.62 EUR |
| IAUZ30N08S5N186ATMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET_(75V 120V( PG-TSDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tj)
Rds On (Max) @ Id, Vgs: 18.6mOhm @ 15A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 13µA
Supplier Device Package: PG-TSDSON-8-32
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 759 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET_(75V 120V( PG-TSDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tj)
Rds On (Max) @ Id, Vgs: 18.6mOhm @ 15A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 13µA
Supplier Device Package: PG-TSDSON-8-32
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 759 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 6654 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 2.56 EUR |
| 14+ | 1.61 EUR |
| 50+ | 1.19 EUR |
| 100+ | 1.06 EUR |
| 500+ | 0.83 EUR |