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IAUZ30N08S5N186ATMA1

IAUZ30N08S5N186ATMA1 Infineon Technologies

Infineon-IAUZ30N08S5N186-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd436b20214 Hersteller: Infineon Technologies
Description: MOSFET_(75V 120V( PG-TSDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tj)
Rds On (Max) @ Id, Vgs: 18.6mOhm @ 15A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 13µA
Supplier Device Package: PG-TSDSON-8-32
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 759 pF @ 40 V
Qualification: AEC-Q101
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Technische Details IAUZ30N08S5N186ATMA1 Infineon Technologies

Description: MOSFET_(75V 120V( PG-TSDSON-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tj), Rds On (Max) @ Id, Vgs: 18.6mOhm @ 15A, 10V, Power Dissipation (Max): 41W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 13µA, Supplier Device Package: PG-TSDSON-8-32, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 759 pF @ 40 V, Qualification: AEC-Q101.

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IAUZ30N08S5N186ATMA1 Hersteller : Infineon Technologies infineon-iauz30n08s5n186-datasheet-v01_01-en.pdf SP005423086
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IAUZ30N08S5N186ATMA1 IAUZ30N08S5N186ATMA1 Hersteller : Infineon Technologies Infineon-IAUZ30N08S5N186-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd436b20214 Description: MOSFET_(75V 120V( PG-TSDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tj)
Rds On (Max) @ Id, Vgs: 18.6mOhm @ 15A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 13µA
Supplier Device Package: PG-TSDSON-8-32
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 759 pF @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IAUZ30N08S5N186ATMA1 IAUZ30N08S5N186ATMA1 Hersteller : Infineon Technologies Infineon_IAUZ30N08S5N186_DataSheet_v01_01_EN-3361623.pdf MOSFETs MOSFET_(75V 120V(
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Im Einkaufswagen  Stück im Wert von  UAH