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IAUZ30N08S5N186ATMA1 Infineon Technologies

Name: IAUZ30N08S5N186ATMA1
Brand: Infineon Technologies
SKU: 32633085-3
Price: 19.50 EUR
Availability: InStock

Infineon-IAUZ30N08S5N186-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd436b20214

Hersteller: Infineon Technologies
Description: MOSFET_(75V 120V( PG-TSDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tj)
Rds On (Max) @ Id, Vgs: 18.6mOhm @ 15A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 13µA
Supplier Device Package: PG-TSDSON-8-32
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 759 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 2739 Stücke:

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Anzahl	Preis
10+	1.95 EUR
15+	1.23 EUR
100+	0.81 EUR
500+	0.63 EUR
1000+	0.57 EUR
2000+	0.53 EUR

Mindestbestellmenge: 10

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Technische Details IAUZ30N08S5N186ATMA1 Infineon Technologies

Description: MOSFET_(75V 120V( PG-TSDSON-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tj), Rds On (Max) @ Id, Vgs: 18.6mOhm @ 15A, 10V, Power Dissipation (Max): 41W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 13µA, Supplier Device Package: PG-TSDSON-8-32, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 759 pF @ 40 V, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote IAUZ30N08S5N186ATMA1

Bezeichnung	Hersteller	Beschreibung	Verfügbarkeit	Preis
IAUZ30N08S5N186ATMA1	Hersteller : Infineon Technologies	SP005423086	Produkt ist nicht verfügbar	Im Einkaufswagen Stück im Wert von UAH
IAUZ30N08S5N186ATMA1	Hersteller : Infineon Technologies	Description: MOSFET_(75V 120V( PG-TSDSON-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tj) Rds On (Max) @ Id, Vgs: 18.6mOhm @ 15A, 10V Power Dissipation (Max): 41W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 13µA Supplier Device Package: PG-TSDSON-8-32 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 759 pF @ 40 V Grade: Automotive Qualification: AEC-Q101	Produkt ist nicht verfügbar	Im Einkaufswagen Stück im Wert von UAH
IAUZ30N08S5N186ATMA1	Hersteller : Infineon Technologies	MOSFETs MOSFET_(75V 120V(	Produkt ist nicht verfügbar	Im Einkaufswagen Stück im Wert von UAH
IAUZ30N08S5N186ATMA1	Hersteller : INFINEON TECHNOLOGIES	Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 7A; Idm: 120A; 41W; PG-TSDSON-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 7A Pulsed drain current: 120A Power dissipation: 41W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 22.7mΩ Mounting: SMD Gate charge: 12.1nC Kind of package: reel; tape Kind of channel: enhancement	Produkt ist nicht verfügbar	Im Einkaufswagen Stück im Wert von UAH