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IAUZ30N08S5N186ATMA1

IAUZ30N08S5N186ATMA1 Infineon Technologies

Infineon-IAUZ30N08S5N186-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd436b20214
Hersteller: Infineon Technologies
Description: MOSFET_(75V 120V( PG-TSDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tj)
Rds On (Max) @ Id, Vgs: 18.6mOhm @ 15A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 13µA
Supplier Device Package: PG-TSDSON-8-32
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 759 pF @ 40 V
Qualification: AEC-Q101
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Lieferzeit 10-14 Tag (e)
AnzahlPreis
10+1.95 EUR
15+1.23 EUR
100+0.81 EUR
500+0.63 EUR
1000+0.57 EUR
2000+0.53 EUR
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Technische Details IAUZ30N08S5N186ATMA1 Infineon Technologies

Description: MOSFET_(75V 120V( PG-TSDSON-8, Qualification: AEC-Q101, Grade: Automotive, Vgs(th) (Max) @ Id: 3.8V @ 13µA, Power Dissipation (Max): 41W (Tc), Rds On (Max) @ Id, Vgs: 18.6mOhm @ 15A, 10V, Current - Continuous Drain (Id) @ 25°C: 30A (Tj), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 759 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Supplier Device Package: PG-TSDSON-8-32.

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IAUZ30N08S5N186ATMA1 IAUZ30N08S5N186ATMA1 Infineon Technologies Infineon-IAUZ30N08S5N186-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd436b20214 Description: MOSFET_(75V 120V( PG-TSDSON-8
Qualification: AEC-Q101
Grade: Automotive
Vgs(th) (Max) @ Id: 3.8V @ 13µA
Power Dissipation (Max): 41W (Tc)
Rds On (Max) @ Id, Vgs: 18.6mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 759 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PG-TSDSON-8-32
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IAUZ30N08S5N186ATMA1 IAUZ30N08S5N186ATMA1 Infineon Technologies Infineon-IAUZ30N08S5N186-DataSheet-v01_01-EN.pdf MOSFETs MOSFET_(75V 120V(
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2 Stücke
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IAUZ30N08S5N186ATMA1 Infineon-IAUZ30N08S5N186-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd436b20214
IAUZ30N08S5N186ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(75V 120V( PG-TSDSON-8
Qualification: AEC-Q101
Grade: Automotive
Vgs(th) (Max) @ Id: 3.8V @ 13µA
Power Dissipation (Max): 41W (Tc)
Rds On (Max) @ Id, Vgs: 18.6mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 759 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PG-TSDSON-8-32
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IAUZ30N08S5N186ATMA1 Infineon-IAUZ30N08S5N186-DataSheet-v01_01-EN.pdf
IAUZ30N08S5N186ATMA1
Hersteller: Infineon Technologies
MOSFETs MOSFET_(75V 120V(
Produkt ist nicht verfügbar
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH