IAUZ40N06S5N105ATMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET_)40V 60V) PG-TSDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tj)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 13µA
Supplier Device Package: PG-TSDSON-8-32
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1099 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 4998 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 9+ | 1.99 EUR |
| 15+ | 1.25 EUR |
| 100+ | 0.83 EUR |
| 500+ | 0.64 EUR |
| 1000+ | 0.58 EUR |
| 2000+ | 0.54 EUR |
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Technische Details IAUZ40N06S5N105ATMA1 Infineon Technologies
Description: MOSFET_)40V 60V) PG-TSDSON-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tj), Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V, Power Dissipation (Max): 42W (Tc), Vgs(th) (Max) @ Id: 3.4V @ 13µA, Supplier Device Package: PG-TSDSON-8-32, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1099 pF @ 30 V, Qualification: AEC-Q101.
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| IAUZ40N06S5N105ATMA1 | Hersteller : Infineon Technologies |
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| IAUZ40N06S5N105ATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 120A; 42W; PG-TSDSON-8 Type of transistor: N-MOSFET Case: PG-TSDSON-8 Drain-source voltage: 60V Drain current: 8A On-state resistance: 12.8mΩ Power dissipation: 42W Polarisation: unipolar Kind of package: reel; tape Gate charge: 16.3nC Technology: OptiMOS™ 5 Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 120A Mounting: SMD Anzahl je Verpackung: 5000 Stücke |
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IAUZ40N06S5N105ATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET_)40V 60V) PG-TSDSON-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tj) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 13µA Supplier Device Package: PG-TSDSON-8-32 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1099 pF @ 30 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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IAUZ40N06S5N105ATMA1 | Hersteller : Infineon Technologies |
MOSFETs MOSFET_)40V 60V) |
Produkt ist nicht verfügbar |
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| IAUZ40N06S5N105ATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 120A; 42W; PG-TSDSON-8 Type of transistor: N-MOSFET Case: PG-TSDSON-8 Drain-source voltage: 60V Drain current: 8A On-state resistance: 12.8mΩ Power dissipation: 42W Polarisation: unipolar Kind of package: reel; tape Gate charge: 16.3nC Technology: OptiMOS™ 5 Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 120A Mounting: SMD |
Produkt ist nicht verfügbar |