IAUZN04S7N013ATMA2 Infineon Technologies
auf Bestellung 3088 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.56 EUR |
| 10+ | 1.13 EUR |
| 100+ | 0.9 EUR |
| 500+ | 0.81 EUR |
| 1000+ | 0.76 EUR |
| 2500+ | 0.7 EUR |
| 5000+ | 0.69 EUR |
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Technische Details IAUZN04S7N013ATMA2 Infineon Technologies
Description: MOSFET_(20V 40V), Packaging: Cut Tape (CT), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 193A (Tj), Rds On (Max) @ Id, Vgs: 1.33mOhm @ 30A, 10V, Power Dissipation (Max): 94W (Tc), Vgs(th) (Max) @ Id: 3V @ 35µA, Supplier Device Package: PG-TSDSON-8-44, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3264 pF @ 20 V, Qualification: AEC-Q101.
Weitere Produktangebote IAUZN04S7N013ATMA2
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| IAUZN04S7N013ATMA2 | Hersteller : Infineon Technologies |
 Description: MOSFET_(20V 40V)Packaging: Tray Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 193A (Tj) Rds On (Max) @ Id, Vgs: 1.33mOhm @ 30A, 10V Power Dissipation (Max): 94W (Tc) Vgs(th) (Max) @ Id: 3V @ 35µA Supplier Device Package: PG-TSDSON-8-44 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3264 pF @ 20 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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| IAUZN04S7N013ATMA2 | Hersteller : Infineon Technologies |
Description: MOSFET_(20V 40V) Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 193A (Tj) Rds On (Max) @ Id, Vgs: 1.33mOhm @ 30A, 10V Power Dissipation (Max): 94W (Tc) Vgs(th) (Max) @ Id: 3V @ 35µA Supplier Device Package: PG-TSDSON-8-44 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3264 pF @ 20 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |