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IAUZN10S7N078ATMA1

IAUZN10S7N078ATMA1 Infineon Technologies


infineon-iauzn10s7n078-datasheet-en.pdf Hersteller: Infineon Technologies
Description: MOSFET_(75V 120V(
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tj)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 30A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 33µA
Supplier Device Package: PG-TSDSON-8-39
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1839 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 4960 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.29 EUR
10+2.1 EUR
100+1.43 EUR
500+1.14 EUR
1000+1.09 EUR
Mindestbestellmenge: 6
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Technische Details IAUZN10S7N078ATMA1 Infineon Technologies

Description: MOSFET_(75V 120V(, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 76A (Tj), Rds On (Max) @ Id, Vgs: 7.8mOhm @ 30A, 10V, Power Dissipation (Max): 94W (Tc), Vgs(th) (Max) @ Id: 3.2V @ 33µA, Supplier Device Package: PG-TSDSON-8-39, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 28.9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1839 pF @ 50 V, Qualification: AEC-Q101.

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IAUZN10S7N078ATMA1 IAUZN10S7N078ATMA1 Hersteller : Infineon Technologies infineon_iauzn10s7n078_datasheet_en.pdf MOSFETs OptiMOS 7 Power-Transistor
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Lieferzeit 10-14 Tag (e)
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1+3.4 EUR
10+2.16 EUR
100+1.5 EUR
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IAUZN10S7N078ATMA1 IAUZN10S7N078ATMA1 Hersteller : Infineon Technologies infineon-iauzn10s7n078-datasheet-en.pdf Description: MOSFET_(75V 120V(
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tj)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 30A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 33µA
Supplier Device Package: PG-TSDSON-8-39
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1839 pF @ 50 V
Qualification: AEC-Q101
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Im Einkaufswagen  Stück im Wert von  UAH