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ICE10N60

ICE10N60 IceMOS Technology

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Hersteller: IceMOS Technology
Description: Superjunction MOSFET
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Power Dissipation (Max): 95W (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Part Status: Active
Packaging: Tube
Vgs (Max): ±20V
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Technische Details ICE10N60 IceMOS Technology

Description: Superjunction MOSFET, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220, Vgs(th) (Max) @ Id: 3.9V @ 250µA, Power Dissipation (Max): 95W (Tc), Rds On (Max) @ Id, Vgs: 330mOhm @ 5A, 10V, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Part Status: Active, Packaging: Tube, Vgs (Max): ±20V.