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ICPB2002-1-110I

ICPB2002-1-110I Microchip Technology

ICPB2002.pdf
Hersteller: Microchip Technology
Description: DC-12 GHZ 12W DISCRETE GAN HEMT
Power - Output: 12W
Frequency: 12GHz
Mounting Type: Surface Mount
Current Rating (Amps): 1A
Package / Case: Die
Packaging: Bulk
Current - Test: 125 mA
Voltage - Test: 28 V
Voltage - Rated: 28 V
Supplier Device Package: Die
Technology: GaN HEMT
Gain: 10dB
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Technische Details ICPB2002-1-110I Microchip Technology

Description: DC-12 GHZ 12W DISCRETE GAN HEMT, Power - Output: 12W, Frequency: 12GHz, Mounting Type: Surface Mount, Current Rating (Amps): 1A, Package / Case: Die, Packaging: Bulk, Current - Test: 125 mA, Voltage - Test: 28 V, Voltage - Rated: 28 V, Supplier Device Package: Die, Technology: GaN HEMT, Gain: 10dB.