IDB15E60ATMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDiodes - General Purpose, Power, Switching Fast Switching 600V EmCon Diode
auf Bestellung 312 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.78 EUR |
| 10+ | 2.46 EUR |
| 25+ | 2.34 EUR |
| 100+ | 1.94 EUR |
| 250+ | 1.81 EUR |
| 500+ | 1.60 EUR |
| 1000+ | 1.24 EUR |
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Technische Details IDB15E60ATMA1 Infineon Technologies
Description: DIODE GP 600V 29.2A TO263-3-2, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 87 ns, Technology: Standard, Current - Average Rectified (Io): 29.2A, Supplier Device Package: PG-TO263-3-2, Operating Temperature - Junction: -40°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 2 V @ 15 A, Current - Reverse Leakage @ Vr: 50 µA @ 600 V.
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IDB15E60ATMA1 | Hersteller : Infineon Technologies |
Description: DIODE GP 600V 29.2A TO263-3-2 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 87 ns Technology: Standard Current - Average Rectified (Io): 29.2A Supplier Device Package: PG-TO263-3-2 Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2 V @ 15 A Current - Reverse Leakage @ Vr: 50 µA @ 600 V |
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