IDB30E120ATMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: DIODE STD 1200V 50A PGTO26332
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 243 ns
Technology: Standard
Current - Average Rectified (Io): 50A
Supplier Device Package: PG-TO263-3-2
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.15 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
| Anzahl | Preis |
|---|---|
| 1000+ | 1.31 EUR |
| 2000+ | 1.21 EUR |
| 3000+ | 1.16 EUR |
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Technische Details IDB30E120ATMA1 Infineon Technologies
Description: DIODE STD 1200V 50A PGTO26332, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 243 ns, Technology: Standard, Current - Average Rectified (Io): 50A, Supplier Device Package: PG-TO263-3-2, Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 2.15 V @ 30 A, Current - Reverse Leakage @ Vr: 100 µA @ 1200 V.
Weitere Produktangebote IDB30E120ATMA1 nach Preis ab 0.93 EUR bis 4.1 EUR
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IDB30E120ATMA1 | Infineon Technologies |
Small Signal Switching Diodes FAST SWITCH EMCON DIODE 1200V 30A |
auf Bestellung 1100 Stücke: Lieferzeit 10-14 Tag (e) |
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IDB30E120ATMA1 | Infineon Technologies |
Description: DIODE STD 1200V 50A PGTO26332 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 243 ns Technology: Standard Current - Average Rectified (Io): 50A Supplier Device Package: PG-TO263-3-2 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.15 V @ 30 A Current - Reverse Leakage @ Vr: 100 µA @ 1200 V |
auf Bestellung 4937 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IDB30E120ATMA1 |
|
Hersteller: Infineon Technologies
Small Signal Switching Diodes FAST SWITCH EMCON DIODE 1200V 30A
Small Signal Switching Diodes FAST SWITCH EMCON DIODE 1200V 30A
auf Bestellung 1100 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.26 EUR |
| 10+ | 2.11 EUR |
| 100+ | 1.43 EUR |
| 500+ | 1.25 EUR |
| 1000+ | 1.09 EUR |
| 2000+ | 0.95 EUR |
| 5000+ | 0.93 EUR |
| IDB30E120ATMA1 |
|
Hersteller: Infineon Technologies
Description: DIODE STD 1200V 50A PGTO26332
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 243 ns
Technology: Standard
Current - Average Rectified (Io): 50A
Supplier Device Package: PG-TO263-3-2
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.15 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Description: DIODE STD 1200V 50A PGTO26332
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 243 ns
Technology: Standard
Current - Average Rectified (Io): 50A
Supplier Device Package: PG-TO263-3-2
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.15 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
auf Bestellung 4937 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 4.1 EUR |
| 10+ | 2.63 EUR |
| 100+ | 1.78 EUR |
| 500+ | 1.42 EUR |