IDB30E60ATMA1 Infineon Technologies
Hersteller: Infineon TechnologiesRectifier Diode Switching 600V 52.3A 126ns 3-Pin(2+Tab) TO-263 T/R
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Technische Details IDB30E60ATMA1 Infineon Technologies
Description: DIODE GP 600V 52.3A TO263-3-2, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 126 ns, Technology: Standard, Current - Average Rectified (Io): 52.3A, Supplier Device Package: PG-TO263-3-2, Operating Temperature - Junction: -40°C ~ 175°C, Part Status: Last Time Buy, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A, Current - Reverse Leakage @ Vr: 50 µA @ 600 V.
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| IDB30E60ATMA1 | Hersteller : INFINEON TECHNOLOGIES |
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IDB30E60ATMA1 | Hersteller : Infineon Technologies |
Description: DIODE GP 600V 52.3A TO263-3-2 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 126 ns Technology: Standard Current - Average Rectified (Io): 52.3A Supplier Device Package: PG-TO263-3-2 Operating Temperature - Junction: -40°C ~ 175°C Part Status: Last Time Buy Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A Current - Reverse Leakage @ Vr: 50 µA @ 600 V |
Produkt ist nicht verfügbar |