IDB30E60ATMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: DIODE GP 600V 52.3A TO263-3-2
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Last Time Buy
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: PG-TO263-3-2
Current - Average Rectified (Io): 52.3A
Technology: Standard
Reverse Recovery Time (trr): 126 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
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Technische Details IDB30E60ATMA1 Infineon Technologies
Description: DIODE GP 600V 52.3A TO263-3-2, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), Current - Reverse Leakage @ Vr: 50 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A, Voltage - DC Reverse (Vr) (Max): 600 V, Part Status: Last Time Buy, Operating Temperature - Junction: -40°C ~ 175°C, Supplier Device Package: PG-TO263-3-2, Current - Average Rectified (Io): 52.3A, Technology: Standard, Reverse Recovery Time (trr): 126 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount.

