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IDC15D120T6MX1SA2

IDC15D120T6MX1SA2 Infineon Technologies


idc15d120t6m.pdf Hersteller: Infineon Technologies
Rectifier Diode Switching 1.2KV 25A 2-Pin Die Wafer
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Technische Details IDC15D120T6MX1SA2 Infineon Technologies

Description: DIODE GP 1.2KV 25A WAFER, Packaging: Bulk, Package / Case: Die, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Current - Average Rectified (Io): 25A, Supplier Device Package: Sawn on foil, Operating Temperature - Junction: -40°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 2.05 V @ 25 A, Current - Reverse Leakage @ Vr: 5.2 µA @ 1200 V.

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IDC15D120T6MX1SA2 Hersteller : Infineon Technologies Infineon-IDC15D120T6M_L4669B-DS-v00_09-en.pdf?fileId=db3a304314dca38901151dcf0a670f55 Description: DIODE GP 1.2KV 25A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 25A
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.05 V @ 25 A
Current - Reverse Leakage @ Vr: 5.2 µA @ 1200 V
Produkt ist nicht verfügbar