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IDC40D120T6HX1SA1

IDC40D120T6HX1SA1 Infineon Technologies


idc40d120t6h.pdf Hersteller: Infineon Technologies
Rectifier Diode Switching 1.2KV 75A 2-Pin Die Wafer
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Technische Details IDC40D120T6HX1SA1 Infineon Technologies

Description: DIODE GEN PURP 1.2KV 75A D2PAK, Packaging: Bulk, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Current - Average Rectified (Io): 75A, Supplier Device Package: D2PAK, Operating Temperature - Junction: -40°C ~ 175°C, Part Status: Obsolete, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 2.25 V @ 75 A, Current Coupled to Voltage - Forward (Vf) (Max) @ If: 75, Voltage Coupled to Current - Reverse Leakage @ Vr: 1200, Current - Reverse Leakage @ Vr: 14 µA @ 1200 V.

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IDC40D120T6HX1SA1 Hersteller : Infineon Technologies IDC40D120T6H_ed0.9_6-27-07.pdf Description: DIODE GEN PURP 1.2KV 75A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 75A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.25 V @ 75 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 75
Voltage Coupled to Current - Reverse Leakage @ Vr: 1200
Current - Reverse Leakage @ Vr: 14 µA @ 1200 V
Produkt ist nicht verfügbar