IDD03SG60C Infineon Technologies
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Technische Details IDD03SG60C Infineon Technologies
Category: SMD Schottky diodes, Description: Diode: Schottky rectifying; PG-TO252-3; SiC; SMD; 600V; 3A; 38W, Type of diode: Schottky rectifying, Case: PG-TO252-3, Technology: CoolSiC™ 3G; SiC, Mounting: SMD, Max. off-state voltage: 0.6kV, Load current: 3A, Semiconductor structure: single diode, Max. forward voltage: 2.1V, Leakage current: 0.23µA, Max. forward impulse current: 9.7A, Kind of package: reel; tape, Power dissipation: 38W.
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IDD03SG60C | Hersteller : INFINEON TECHNOLOGIES |
 Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; PG-TO252-3; SiC; SMD; 600V; 3A; 38W Type of diode: Schottky rectifying Case: PG-TO252-3 Technology: CoolSiC™ 3G; SiC Mounting: SMD Max. off-state voltage: 0.6kV Load current: 3A Semiconductor structure: single diode Max. forward voltage: 2.1V Leakage current: 0.23µA Max. forward impulse current: 9.7A Kind of package: reel; tape Power dissipation: 38W |
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