IDD03SG60CXTMA1 Infineon Technologies
| Anzahl | Preis |
|---|---|
| 207+ | 2.65 EUR |
| 500+ | 2.36 EUR |
| 1000+ | 2.11 EUR |
| 10000+ | 1.84 EUR |
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Technische Details IDD03SG60CXTMA1 Infineon Technologies
Description: DIODE SIL CARB 600V 3A PGTO2523, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: Zero Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 60pF @ 1V, 1MHz, Current - Average Rectified (Io): 3A, Supplier Device Package: PG-TO252-3, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 3 A, Current - Reverse Leakage @ Vr: 15 µA @ 600 V.
Weitere Produktangebote IDD03SG60CXTMA1 nach Preis ab 2.71 EUR bis 2.71 EUR
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IDD03SG60CXTMA1 | Infineon Technologies |
 Description: DIODE SIL CARB 600V 3A PGTO2523Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 60pF @ 1V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: PG-TO252-3 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 3 A Current - Reverse Leakage @ Vr: 15 µA @ 600 V |
auf Bestellung 58345 Stücke: Lieferzeit 10-14 Tag (e) |
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| IDD03SG60CXTMA1 | Infineon Technologies |
Schottky Diodes & Rectifiers SIC DIODEN |
auf Bestellung 2490 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IDD03SG60CXTMA1 |
|
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 600V 3A PGTO2523
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 60pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: PG-TO252-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 3 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
Description: DIODE SIL CARB 600V 3A PGTO2523
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 60pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: PG-TO252-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 3 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
auf Bestellung 58345 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 166+ | 2.71 EUR |
| IDD03SG60CXTMA1 |
|
Hersteller: Infineon Technologies
Schottky Diodes & Rectifiers SIC DIODEN
Schottky Diodes & Rectifiers SIC DIODEN
auf Bestellung 2490 Stücke:
Lieferzeit 10-14 Tag (e)