IDD04SG60C Infineon Technologies
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Technische Details IDD04SG60C Infineon Technologies
Category: SMD Schottky diodes, Description: Diode: Schottky rectifying; SiC; SMD; 600V; 4A; PG-TO252-3; 43W, Type of diode: Schottky rectifying, Technology: CoolSiC™ 3G; SiC, Mounting: SMD, Max. off-state voltage: 0.6kV, Load current: 4A, Semiconductor structure: single diode, Max. forward voltage: 2.1V, Case: PG-TO252-3, Kind of package: reel; tape, Leakage current: 0.3µA, Max. forward impulse current: 13.5A, Power dissipation: 43W, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote IDD04SG60C
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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IDD04SG60C | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 600V; 4A; PG-TO252-3; 43W Type of diode: Schottky rectifying Technology: CoolSiC™ 3G; SiC Mounting: SMD Max. off-state voltage: 0.6kV Load current: 4A Semiconductor structure: single diode Max. forward voltage: 2.1V Case: PG-TO252-3 Kind of package: reel; tape Leakage current: 0.3µA Max. forward impulse current: 13.5A Power dissipation: 43W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IDD04SG60C | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 600V; 4A; PG-TO252-3; 43W Type of diode: Schottky rectifying Technology: CoolSiC™ 3G; SiC Mounting: SMD Max. off-state voltage: 0.6kV Load current: 4A Semiconductor structure: single diode Max. forward voltage: 2.1V Case: PG-TO252-3 Kind of package: reel; tape Leakage current: 0.3µA Max. forward impulse current: 13.5A Power dissipation: 43W |
Produkt ist nicht verfügbar |