IDD05SG60C Infineon Technologies

Description: DIODE SIL CARB 600V 5A TO252-3, Part Status: Active, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: PG-TO252-3, Current - Average Rectified (Io): 5A, Capacitance @ Vr, F: 110pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Bulk, Current - Reverse Leakage @ Vr: 30 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 5 A, Voltage - DC Reverse (Vr) (Max): 600 V.