IDD12SG60C Infineon Technologies
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Technische Details IDD12SG60C Infineon Technologies
Category: SMD Schottky diodes, Description: Diode: Schottky rectifying; SiC; SMD; 600V; 12A; PG-TO252-3; 125W, Mounting: SMD, Kind of package: reel; tape, Technology: CoolSiC™ 3G; SiC, Power dissipation: 125W, Max. forward voltage: 1.8V, Load current: 12A, Max. forward impulse current: 51A, Max. off-state voltage: 600V, Leakage current: 1µA, Case: PG-TO252-3, Type of diode: Schottky rectifying, Semiconductor structure: single diode.
Weitere Produktangebote IDD12SG60C
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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IDD12SG60C | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 600V; 12A; PG-TO252-3; 125W Mounting: SMD Kind of package: reel; tape Technology: CoolSiC™ 3G; SiC Power dissipation: 125W Max. forward voltage: 1.8V Load current: 12A Max. forward impulse current: 51A Max. off-state voltage: 600V Leakage current: 1µA Case: PG-TO252-3 Type of diode: Schottky rectifying Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
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IDD12SG60C | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 600V; 12A; PG-TO252-3; 125W Mounting: SMD Kind of package: reel; tape Technology: CoolSiC™ 3G; SiC Power dissipation: 125W Max. forward voltage: 1.8V Load current: 12A Max. forward impulse current: 51A Max. off-state voltage: 600V Leakage current: 1µA Case: PG-TO252-3 Type of diode: Schottky rectifying Semiconductor structure: single diode |
Produkt ist nicht verfügbar |