IDD15E60BUMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: DIODE GP 600V 29.2A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 87 ns
Technology: Standard
Current - Average Rectified (Io): 29.2A
Supplier Device Package: PG-TO252-3
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
auf Bestellung 14802 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 544+ | 0.97 EUR |
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Technische Details IDD15E60BUMA1 Infineon Technologies
Description: DIODE GP 600V 29.2A TO252-3, Packaging: Bulk, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 87 ns, Technology: Standard, Current - Average Rectified (Io): 29.2A, Supplier Device Package: PG-TO252-3, Operating Temperature - Junction: -40°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 2 V @ 15 A, Current - Reverse Leakage @ Vr: 50 µA @ 600 V.
Weitere Produktangebote IDD15E60BUMA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| IDD15E60BUMA1 | Hersteller : ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - IDD15E60BUMA1 - IDD15E60 - SILICON POWER DIODE euEccn: TBC hazardous: false productTraceability: Yes-Date/Lot Code usEccn: TBC SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 14802 Stücke: Lieferzeit 14-21 Tag (e) |