IDDD10G65C6XTMA1 Infineon Technologies
| Anzahl | Preis |
|---|---|
| 1+ | 6.23 EUR |
| 10+ | 4.45 EUR |
| 100+ | 3.54 EUR |
| 500+ | 3.04 EUR |
| 1000+ | 2.85 EUR |
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Technische Details IDDD10G65C6XTMA1 Infineon Technologies
Description: DIODE SIC 650V 29A PGHDSOP101, Current - Reverse Leakage @ Vr: 33 µA @ 420 V, Voltage - DC Reverse (Vr) (Max): 650 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: PG-HDSOP-10-1, Current - Average Rectified (Io): 29A, Capacitance @ Vr, F: 495pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Surface Mount, Package / Case: 10-PowerSOP Module, Packaging: Tape & Reel (TR).
Weitere Produktangebote IDDD10G65C6XTMA1 nach Preis ab 2.86 EUR bis 7.43 EUR
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IDDD10G65C6XTMA1 | Infineon Technologies |
 Description: DIODE SIC 650V 29A PGHDSOP101Supplier Device Package: PG-HDSOP-10-1 Current - Average Rectified (Io): 29A Capacitance @ Vr, F: 495pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Surface Mount Package / Case: 10-PowerSOP Module Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 33 µA @ 420 V Voltage - DC Reverse (Vr) (Max): 650 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C |
auf Bestellung 1323 Stücke: Lieferzeit 10-14 Tag (e) |
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| IDDD10G65C6XTMA1 |
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Hersteller: Infineon Technologies
Description: DIODE SIC 650V 29A PGHDSOP101
Supplier Device Package: PG-HDSOP-10-1
Current - Average Rectified (Io): 29A
Capacitance @ Vr, F: 495pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: 10-PowerSOP Module
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 33 µA @ 420 V
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Description: DIODE SIC 650V 29A PGHDSOP101
Supplier Device Package: PG-HDSOP-10-1
Current - Average Rectified (Io): 29A
Capacitance @ Vr, F: 495pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: 10-PowerSOP Module
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 33 µA @ 420 V
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
auf Bestellung 1323 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 7.43 EUR |
| 10+ | 4.42 EUR |
| 100+ | 3.44 EUR |
| 500+ | 2.86 EUR |