IDDD12G65C6XTMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: DIODE SIC 650V 34A PGHDSOP101
Packaging: Bulk
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 594pF @ 1V, 1MHz
Current - Average Rectified (Io): 34A
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 40 µA @ 420 V
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Technische Details IDDD12G65C6XTMA1 Infineon Technologies
Description: DIODE SIC 650V 34A PGHDSOP101, Current - Reverse Leakage @ Vr: 40 µA @ 420 V, Voltage - DC Reverse (Vr) (Max): 650 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: PG-HDSOP-10-1, Current - Average Rectified (Io): 34A, Capacitance @ Vr, F: 594pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Surface Mount, Package / Case: 10-PowerSOP Module, Packaging: Tape & Reel (TR).
Weitere Produktangebote IDDD12G65C6XTMA1 nach Preis ab 3.68 EUR bis 8.45 EUR
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IDDD12G65C6XTMA1 | Infineon Technologies |
Schottky Diodes & Rectifiers SIC DIODES |
auf Bestellung 1621 Stücke: Lieferzeit 10-14 Tag (e) |
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IDDD12G65C6XTMA1 | Infineon Technologies |
Description: DIODE SIC 650V 34A PGHDSOP101 Current - Reverse Leakage @ Vr: 40 µA @ 420 V Voltage - DC Reverse (Vr) (Max): 650 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: PG-HDSOP-10-1 Current - Average Rectified (Io): 34A Capacitance @ Vr, F: 594pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Surface Mount Package / Case: 10-PowerSOP Module Packaging: Cut Tape (CT) |
auf Bestellung 1688 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IDDD12G65C6XTMA1 |
|
Hersteller: Infineon Technologies
Schottky Diodes & Rectifiers SIC DIODES
Schottky Diodes & Rectifiers SIC DIODES
auf Bestellung 1621 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 5.97 EUR |
| 10+ | 5.24 EUR |
| 100+ | 4.52 EUR |
| 250+ | 3.85 EUR |
| 500+ | 3.82 EUR |
| 1000+ | 3.73 EUR |
| 1700+ | 3.68 EUR |
| IDDD12G65C6XTMA1 |
|
Hersteller: Infineon Technologies
Description: DIODE SIC 650V 34A PGHDSOP101
Current - Reverse Leakage @ Vr: 40 µA @ 420 V
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-HDSOP-10-1
Current - Average Rectified (Io): 34A
Capacitance @ Vr, F: 594pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: 10-PowerSOP Module
Packaging: Cut Tape (CT)
Description: DIODE SIC 650V 34A PGHDSOP101
Current - Reverse Leakage @ Vr: 40 µA @ 420 V
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-HDSOP-10-1
Current - Average Rectified (Io): 34A
Capacitance @ Vr, F: 594pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: 10-PowerSOP Module
Packaging: Cut Tape (CT)
auf Bestellung 1688 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 8.45 EUR |