IDDD20G65C6XTMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: DIODE SIC 650V 51A PGHDSOP101
Current - Average Rectified (Io): 51A
Capacitance @ Vr, F: 970pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: 10-PowerSOP Module
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 67 µA @ 420 V
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-HDSOP-10-1
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Technische Details IDDD20G65C6XTMA1 Infineon Technologies
Description: DIODE SIC 650V 51A PGHDSOP101, Current - Average Rectified (Io): 51A, Capacitance @ Vr, F: 970pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Surface Mount, Package / Case: 10-PowerSOP Module, Packaging: Tape & Reel (TR), Current - Reverse Leakage @ Vr: 67 µA @ 420 V, Voltage - DC Reverse (Vr) (Max): 650 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: PG-HDSOP-10-1.
Weitere Produktangebote IDDD20G65C6XTMA1 nach Preis ab 5.63 EUR bis 16.23 EUR
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IDDD20G65C6XTMA1 | Infineon Technologies |
SiC Schottky Diodes SIC DIODES |
auf Bestellung 738 Stücke: Lieferzeit 10-14 Tag (e) |
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IDDD20G65C6XTMA1 | Infineon Technologies |
Description: DIODE SIC 650V 51A PGHDSOP101 Capacitance @ Vr, F: 970pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Surface Mount Package / Case: 10-PowerSOP Module Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 67 µA @ 420 V Voltage - DC Reverse (Vr) (Max): 650 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: PG-HDSOP-10-1 Current - Average Rectified (Io): 51A |
auf Bestellung 4558 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IDDD20G65C6XTMA1 |
|
Hersteller: Infineon Technologies
SiC Schottky Diodes SIC DIODES
SiC Schottky Diodes SIC DIODES
auf Bestellung 738 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 12.58 EUR |
| 10+ | 8.71 EUR |
| 100+ | 6.71 EUR |
| 500+ | 6.21 EUR |
| 1000+ | 5.63 EUR |
| IDDD20G65C6XTMA1 |
|
Hersteller: Infineon Technologies
Description: DIODE SIC 650V 51A PGHDSOP101
Capacitance @ Vr, F: 970pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: 10-PowerSOP Module
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 67 µA @ 420 V
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-HDSOP-10-1
Current - Average Rectified (Io): 51A
Description: DIODE SIC 650V 51A PGHDSOP101
Capacitance @ Vr, F: 970pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: 10-PowerSOP Module
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 67 µA @ 420 V
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-HDSOP-10-1
Current - Average Rectified (Io): 51A
auf Bestellung 4558 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 16.23 EUR |
| 10+ | 11.07 EUR |
| 100+ | 8.16 EUR |
| 500+ | 6.95 EUR |