IDFW60C65D1XKSA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: DIODE ARR GP 650V 56A TO247-3-AI
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 112 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 56A (DC)
Supplier Device Package: PG-TO247-3-AI
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 212 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 9.06 EUR |
| 30+ | 5.13 EUR |
| 120+ | 4.27 EUR |
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Technische Details IDFW60C65D1XKSA1 Infineon Technologies
Description: DIODE ARR GP 650V 56A TO247-3-AI, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 112 ns, Technology: Standard, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 56A (DC), Supplier Device Package: PG-TO247-3-AI, Operating Temperature - Junction: -40°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 30 A, Current - Reverse Leakage @ Vr: 40 µA @ 650 V.
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