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IDFW60C65D1XKSA1

IDFW60C65D1XKSA1 Infineon Technologies


Infineon-IDFW60C65D1-DS-v02_01-EN.pdf?fileId=5546d462636cc8fb01644abc3a3b0ced Hersteller: Infineon Technologies
Description: DIODE ARRAY GP 650V 56A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 112 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 56A (DC)
Supplier Device Package: PG-TO247-3-AI
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 240 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+9.2 EUR
10+ 7.73 EUR
240+ 5.91 EUR
Mindestbestellmenge: 2
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Technische Details IDFW60C65D1XKSA1 Infineon Technologies

Description: DIODE ARRAY GP 650V 56A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 112 ns, Technology: Standard, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 56A (DC), Supplier Device Package: PG-TO247-3-AI, Operating Temperature - Junction: -40°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 30 A, Current - Reverse Leakage @ Vr: 40 µA @ 650 V.

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