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IDH02G120C5XKSA1

IDH02G120C5XKSA1 Infineon Technologies


Infineon_IDH02G120C5_DataSheet_v02_02_EN-3361637.pdf Hersteller: Infineon Technologies
Schottky Diodes & Rectifiers SIC CHIP/DISCRETE
auf Bestellung 517 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+4.03 EUR
10+ 3.2 EUR
100+ 2.82 EUR
500+ 2.46 EUR
1000+ 2.15 EUR
5000+ 2.08 EUR
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Technische Details IDH02G120C5XKSA1 Infineon Technologies

Description: DIODE SIL CARB 1.2KV 2A TO220-1, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 182pF @ 1V, 1MHz, Current - Average Rectified (Io): 2A, Supplier Device Package: PG-TO220-2-1, Operating Temperature - Junction: 175°C (Max), Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 2 A, Current - Reverse Leakage @ Vr: 18 µA @ 1200 V.

Weitere Produktangebote IDH02G120C5XKSA1 nach Preis ab 2.28 EUR bis 4.79 EUR

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IDH02G120C5XKSA1 IDH02G120C5XKSA1 Hersteller : Infineon Technologies Infineon-IDH02G120C5-DS-v02_00-EN.pdf?fileId=5546d4624f72be57014f742547f51720 Description: DIODE SIL CARB 1.2KV 2A TO220-1
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 182pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: PG-TO220-2-1
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 2 A
Current - Reverse Leakage @ Vr: 18 µA @ 1200 V
auf Bestellung 1961 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+4.79 EUR
50+ 3.85 EUR
100+ 3.17 EUR
500+ 2.68 EUR
1000+ 2.28 EUR
Mindestbestellmenge: 4
IDH02G120C5XKSA1 IDH02G120C5XKSA1 Hersteller : INFINEON TECHNOLOGIES IDH02G120C5-DTE.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 2A; 75W; PG-TO220-2
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward voltage: 1.4V
Max. forward impulse current: 37A
Leakage current: 1.2µA
Power dissipation: 75W
Technology: CoolSiC™ 5G; SiC
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IDH02G120C5XKSA1 IDH02G120C5XKSA1 Hersteller : INFINEON TECHNOLOGIES IDH02G120C5-DTE.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 2A; 75W; PG-TO220-2
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward voltage: 1.4V
Max. forward impulse current: 37A
Leakage current: 1.2µA
Power dissipation: 75W
Technology: CoolSiC™ 5G; SiC
Kind of package: tube
Produkt ist nicht verfügbar