IDH02G65C5XKSA2 Infineon Technologies
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 650V 2A PGTO220
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 70pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: PG-TO220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
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Technische Details IDH02G65C5XKSA2 Infineon Technologies
Description: DIODE SIL CARB 650V 2A PGTO220, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 70pF @ 1V, 1MHz, Current - Average Rectified (Io): 2A, Supplier Device Package: PG-TO220-2, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A.
Weitere Produktangebote IDH02G65C5XKSA2 nach Preis ab 0.74 EUR bis 2.55 EUR
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IDH02G65C5XKSA2 | Infineon Technologies |
SiC Schottky Diodes SIC DIODES |
auf Bestellung 315 Stücke: Lieferzeit 10-14 Tag (e) |
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| IDH02G65C5XKSA2 |
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Hersteller: Infineon Technologies
SiC Schottky Diodes SIC DIODES
SiC Schottky Diodes SIC DIODES
auf Bestellung 315 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.55 EUR |
| 10+ | 1.64 EUR |
| 100+ | 1.34 EUR |
| 500+ | 1.04 EUR |
| 1000+ | 0.81 EUR |
| 2500+ | 0.77 EUR |
| 5000+ | 0.74 EUR |