IDH04G65C5 INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; PG-TO220-2; 48W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward voltage: 1.8V
Max. forward impulse current: 35A
Leakage current: 0.8µA
Power dissipation: 48W
Kind of package: tube
Heatsink thickness: 1.17...137mm
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; PG-TO220-2; 48W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward voltage: 1.8V
Max. forward impulse current: 35A
Leakage current: 0.8µA
Power dissipation: 48W
Kind of package: tube
Heatsink thickness: 1.17...137mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 146 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 28+ | 2.6 EUR |
| 31+ | 2.33 EUR |
| 32+ | 2.25 EUR |
| 33+ | 2.17 EUR |
| 34+ | 2.12 EUR |
| 50+ | 2.04 EUR |
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Technische Details IDH04G65C5 INFINEON TECHNOLOGIES
Category: THT Schottky diodes, Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; PG-TO220-2; 48W, Type of diode: Schottky rectifying, Technology: CoolSiC™ 5G; SiC, Mounting: THT, Max. off-state voltage: 650V, Load current: 4A, Semiconductor structure: single diode, Case: PG-TO220-2, Max. forward voltage: 1.8V, Max. forward impulse current: 35A, Leakage current: 0.8µA, Power dissipation: 48W, Kind of package: tube, Heatsink thickness: 1.17...137mm, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote IDH04G65C5 nach Preis ab 2.04 EUR bis 2.6 EUR
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IDH04G65C5 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; PG-TO220-2; 48W Type of diode: Schottky rectifying Technology: CoolSiC™ 5G; SiC Mounting: THT Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: PG-TO220-2 Max. forward voltage: 1.8V Max. forward impulse current: 35A Leakage current: 0.8µA Power dissipation: 48W Kind of package: tube Heatsink thickness: 1.17...137mm |
auf Bestellung 146 Stücke: Lieferzeit 14-21 Tag (e) |
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IDH04G65C5 | Hersteller : Infineon Technologies |
 SiC Schottky Diodes SIC DIODES |
Produkt ist nicht verfügbar |