IDH04G65C5 INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; 48W; PG-TO220-2
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Power dissipation: 48W
Semiconductor structure: single diode
Case: PG-TO220-2
Kind of package: tube
Heatsink thickness: 1.17...137mm
Max. forward impulse current: 35A
Max. forward voltage: 1.8V
Leakage current: 0.8µA
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; 48W; PG-TO220-2
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Power dissipation: 48W
Semiconductor structure: single diode
Case: PG-TO220-2
Kind of package: tube
Heatsink thickness: 1.17...137mm
Max. forward impulse current: 35A
Max. forward voltage: 1.8V
Leakage current: 0.8µA
Anzahl je Verpackung: 1 Stücke
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Technische Details IDH04G65C5 INFINEON TECHNOLOGIES
Category: THT Schottky diodes, Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; 48W; PG-TO220-2, Type of diode: Schottky rectifying, Technology: CoolSiC™ 5G; SiC, Mounting: THT, Max. off-state voltage: 650V, Load current: 4A, Power dissipation: 48W, Semiconductor structure: single diode, Case: PG-TO220-2, Kind of package: tube, Heatsink thickness: 1.17...137mm, Max. forward impulse current: 35A, Max. forward voltage: 1.8V, Leakage current: 0.8µA, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote IDH04G65C5
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Verfügbarkeit |
Preis ohne MwSt |
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IDH04G65C5 | Hersteller : Infineon Technologies |
 Schottky Diodes & Rectifiers SIC DIODES |
Produkt ist nicht verfügbar |
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IDH04G65C5 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; 48W; PG-TO220-2 Type of diode: Schottky rectifying Technology: CoolSiC™ 5G; SiC Mounting: THT Max. off-state voltage: 650V Load current: 4A Power dissipation: 48W Semiconductor structure: single diode Case: PG-TO220-2 Kind of package: tube Heatsink thickness: 1.17...137mm Max. forward impulse current: 35A Max. forward voltage: 1.8V Leakage current: 0.8µA |
Produkt ist nicht verfügbar |