IDH05SG60CXKSA2 Infineon Technologies
| Anzahl | Preis |
|---|---|
| 1+ | 6.3 EUR |
| 10+ | 5 EUR |
| 100+ | 3.92 EUR |
| 250+ | 3.64 EUR |
| 500+ | 3.15 EUR |
| 1000+ | 3.03 EUR |
| 2500+ | 2.92 EUR |
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Technische Details IDH05SG60CXKSA2 Infineon Technologies
Description: DIODE SIL CARB 600V 5A TO220-2-1, Package / Case: TO-220-2, Packaging: Tube, Current - Reverse Leakage @ Vr: 30 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 5 A, Voltage - DC Reverse (Vr) (Max): 600 V, Part Status: Last Time Buy, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: PG-TO220-2-1, Current - Average Rectified (Io): 5A, Capacitance @ Vr, F: 110pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole.
Weitere Produktangebote IDH05SG60CXKSA2
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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IDH05SG60CXKSA2 | Infineon Technologies |
 Description: DIODE SIL CARB 600V 5A TO220-2-1Package / Case: TO-220-2 Packaging: Tube Current - Reverse Leakage @ Vr: 30 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 5 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Last Time Buy Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: PG-TO220-2-1 Current - Average Rectified (Io): 5A Capacitance @ Vr, F: 110pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IDH05SG60CXKSA2 |
|
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 600V 5A TO220-2-1
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Last Time Buy
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-TO220-2-1
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 110pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Description: DIODE SIL CARB 600V 5A TO220-2-1
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Last Time Buy
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-TO220-2-1
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 110pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
Im Einkaufswagen
Stück im Wert von UAH